BTD1616AM3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD1616AM3

Código: DG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.1 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 11 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

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BTD1616AM3 datasheet

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BTD1616AM3

Spec. No. C602M3 Issued Date 2009.04.01 CYStech Electronics Corp. Revised Date 2014.03.28 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AM3 IC 3A VCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h

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BTD1616AM3

Spec. No. C602A3 Issued Date 2009.05.14 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AA3 IC 1A RCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package

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 btd1664m3.pdf pdf_icon

BTD1616AM3

Spec. No. C223M3 Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25V IC 1.5A BTD1664M3 RCESAT 0.31 (typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA

Otros transistores... BTD965A3, BTD965LA3, BTD965N3, BTD1304A3, BTD1304N3, BTD1383L3, BTD1383M3, BTD1616AA3, 2N3904, BTD1664M3, BTD1760J3, BTD1766M3, BTD1768A3, BTD1768BA3, BTD1768M3, BTD1768N3, BTD1768S3