BTD1616AM3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD1616AM3
SMD Transistor Code: DG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
BTD1616AM3 Transistor Equivalent Substitute - Cross-Reference Search
BTD1616AM3 Datasheet (PDF)
btd1616am3.pdf
Spec. No. : C602M3 Issued Date : 2009.04.01 CYStech Electronics Corp.Revised Date :2014.03.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AM3IC 3AVCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h
btd1616aa3.pdf
Spec. No. : C602A3 Issued Date : 2009.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AA3IC 1ARCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package
btd1664m3.pdf
Spec. No. : C223M3 Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date :2013.08.07 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25VIC 1.5ABTD1664M3 RCESAT 0.31(typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
