BTD1616AM3 Specs and Replacement
Type Designator: BTD1616AM3
SMD Transistor Code: DG
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
BTD1616AM3 Substitution
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BTD1616AM3 datasheet
Spec. No. C602M3 Issued Date 2009.04.01 CYStech Electronics Corp. Revised Date 2014.03.28 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AM3 IC 3A VCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h... See More ⇒
Spec. No. C602A3 Issued Date 2009.05.14 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AA3 IC 1A RCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package ... See More ⇒
Spec. No. C223M3 Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25V IC 1.5A BTD1664M3 RCESAT 0.31 (typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA ... See More ⇒
Detailed specifications: BTD965A3 , BTD965LA3 , BTD965N3 , BTD1304A3 , BTD1304N3 , BTD1383L3 , BTD1383M3 , BTD1616AA3 , 2N3904 , BTD1664M3 , BTD1760J3 , BTD1766M3 , BTD1768A3 , BTD1768BA3 , BTD1768M3 , BTD1768N3 , BTD1768S3 .
History: 2SC681
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