BTD2061FP Todos los transistores

 

BTD2061FP Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD2061FP

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Capacitancia de salida (Cc): 70 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO-220FP

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BTD2061FP datasheet

 ..1. Size:215K  cystek
btd2061fp.pdf pdf_icon

BTD2061FP

Spec. No. C819FP Issued Date 2005.09.07 CYStech Electronics Corp. Revised Date 2012.06.29 Page No. 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2061FP Features Low saturation voltage, typically VCE(sat)=0.25V at IC/IB=2A/0.2A. Excellent DC current gain characteristics. Wide SOA(safe operating area). Pb-free package. Symbol Outline BTD2061FP T

 9.1. Size:227K  cystek
btd2098am3.pdf pdf_icon

BTD2061FP

Spec. No. C847M3 Issued Date 2003.04.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098AM3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386AM3 Pb-free package Symbol Outline BTD2098AM3 SOT-89

 9.2. Size:242K  cystek
btd2098ln3.pdf pdf_icon

BTD2061FP

Spec. No. C850N3 Issued Date 2004.01.28 CYStech Electronics Corp. Revised Date 2012.02.21 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098LN3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386LN3 Pb-free package Symbol Outline BTD2098LN3 SOT-23

 9.3. Size:234K  cystek
btd2098m3.pdf pdf_icon

BTD2061FP

Spec. No. C623M3 Issued Date 2013.03.19 CYStech Electronics Corp. Revised Date 2013.04.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098M3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386M3 Pb-free lead plating package Symbol Outline BTD209

Otros transistores... BTD1857AT3 , BTD1858A3 , BTD1858I3 , BTD1858T3 , BTD1864I3 , BTD1980J3 , BTD2040N3S , BTD2057A3 , MJE340 , BTD2098AM3 , BTD2098LN3 , BTD2098M3 , BTD2114N3 , BTD2118LJ3 , BTD2118T3 , BTD2150A3 , BTD2150AD3 .

History: BTD2150A3

 

 

 


History: BTD2150A3

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