BTD2061FP Datasheet. Specs and Replacement

Type Designator: BTD2061FP  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-220FP

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BTD2061FP datasheet

 ..1. Size:215K  cystek

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BTD2061FP

Spec. No. C819FP Issued Date 2005.09.07 CYStech Electronics Corp. Revised Date 2012.06.29 Page No. 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2061FP Features Low saturation voltage, typically VCE(sat)=0.25V at IC/IB=2A/0.2A. Excellent DC current gain characteristics. Wide SOA(safe operating area). Pb-free package. Symbol Outline BTD2061FP T... See More ⇒

 9.1. Size:227K  cystek

btd2098am3.pdf pdf_icon

BTD2061FP

Spec. No. C847M3 Issued Date 2003.04.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098AM3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386AM3 Pb-free package Symbol Outline BTD2098AM3 SOT-89 ... See More ⇒

 9.2. Size:242K  cystek

btd2098ln3.pdf pdf_icon

BTD2061FP

Spec. No. C850N3 Issued Date 2004.01.28 CYStech Electronics Corp. Revised Date 2012.02.21 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098LN3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386LN3 Pb-free package Symbol Outline BTD2098LN3 SOT-23 ... See More ⇒

 9.3. Size:234K  cystek

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BTD2061FP

Spec. No. C623M3 Issued Date 2013.03.19 CYStech Electronics Corp. Revised Date 2013.04.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098M3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386M3 Pb-free lead plating package Symbol Outline BTD209... See More ⇒

Detailed specifications: BTD1857AT3, BTD1858A3, BTD1858I3, BTD1858T3, BTD1864I3, BTD1980J3, BTD2040N3S, BTD2057A3, MJE340, BTD2098AM3, BTD2098LN3, BTD2098M3, BTD2114N3, BTD2118LJ3, BTD2118T3, BTD2150A3, BTD2150AD3

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