2SB834I Datasheet. Equivalente

 ..1. Size:466K  blue-rocket-elect
 2sb834i.pdf

 8.1. Size:203K  utc
 2sb834.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB834L-x-AB3-R 2SB834G-x-AB3-R SOT-89 B C E Tape Reel 2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 E C B Bulk 2SB834L-x-TA3-T 2SB834G-x-T

 8.2. Size:118K  mospec
 2sb834.pdf

A A A

 8.3. Size:60K  secos
 2sb834.pdf

2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free ITO-220J FEATURES Power switching applications B N D E CLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y M A 60 120 100 200 Range H J C K G Collector L L F 2 Millimeter Millimeter REF. REF. Min. M

 8.4. Size:1974K  jiangsu
 2sb834.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Low Collector -Emitter Saturation Voltage 2. COLLECTOR VCE(sat)=1.0V(Max)@ IC=-3A,IB=-0.3A DC current Gain 3. EMITTER hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

 8.5. Size:188K  jmnic
 2sb834.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

 8.6. Size:263K  lge
 2sb834.pdf

2SB834(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO -60 V

 8.7. Size:169K  wietron
 2sb834.pdf

2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 Features 1 BASE 2 * DC Current Gain hFE = 60-200 @IC = 0.5A 3 1 * Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A 1. BASE 2. COLLECTOR * Complememtary to NPN 2SD880 3. EMITTER 3 TO-220 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector to Base Voltage -60 V VC

 8.8. Size:505K  jilin sino
 2sb834.pdf

PNP PNP Epitaxial Silicon Transistor R 2SB834 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SD880 Complementary to 2SD880 RoHS RoHS product Package TO-220 TO-220C ORDER MESSAGE

 8.9. Size:246K  lzg
 2sb834 3ca834.pdf

2SB834(3CA834) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. , 2SD880(3DD880) Features Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25 )

 8.10. Size:218K  inchange semiconductor
 2sb834.pdf

isc Silicon PNP Power Transistor 2SB834 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -3.0A CE(sat) C Complementary to 2SD880 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applicati