Биполярный транзистор 2SB834I - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB834I
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 9 MHz
Ёмкость коллекторного перехода (Cc): 150 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO251
2SB834I Datasheet (PDF)
2sb834i.pdf
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2SB834I(BR3CA834I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features , 2SD880I(BR3DD880I) Low collector saturation voltage, collector power dissipation, complementary to2SD880I(BR3DD880I). / Applications
2sb834.pdf
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UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB834L-x-AB3-R 2SB834G-x-AB3-R SOT-89 B C E Tape Reel2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 E C B Bulk2SB834L-x-TA3-T 2SB834G-x-T
2sb834.pdf
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2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free ITO-220J FEATURES Power switching applications B NDECLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y M A60~120 100~200 Range H J CKGCollector L L F2 Millimeter Millimeter REF. REF. Min. M
2sb834.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Low Collector -Emitter Saturation Voltage 2. COLLECTOR VCE(sat)=1.0V(Max)@ IC=-3A,IB=-0.3A DC current Gain 3. EMITTER hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (Ta=25 unless otherwise noted)
2sb834.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
2sb834.pdf
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2SB834(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO -60 V
2sb834.pdf
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2SB834PNP Silicon Epitaxial Power TransistorP b Lead(Pb)-FreeCOLLECTOR2 Features:1BASE2* DC Current Gain hFE = 60-200 @IC = 0.5A31* Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A1. BASE2. COLLECTOR* Complememtary to NPN 2SD8803. EMITTER3TO-220EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Value UnitVCBOCollector to Base Voltage-60 VVC
2sb834.pdf
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PNP PNP Epitaxial Silicon Transistor R2SB834 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SD880 Complementary to 2SD880 RoHS RoHS product Package TO-220 TO-220C ORDER MESSAGE
2sb834 3ca834.pdf
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2SB834(3CA834) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier applications. :, 2SD880(3DD880) Features: Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25)
2sb834.pdf
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isc Silicon PNP Power Transistor 2SB834DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3.0ACE(sat) CComplementary to 2SD880Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicati
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
![2SB834I](https://alltransistors.com/images/us.png)
![2SB834I](https://alltransistors.com/images/es.png)
![2SB834I](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS