TT2190 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TT2190  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO220F

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TT2190 datasheet

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 tt2190.pdf pdf_icon

TT2190

TT2190(BR3DA2190F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features (V =1500V) MBIT CBO High Speed, high breakdown voltage(VCBO=1500V),high reliability(Adoption of HVP process.

 0.1. Size:29K  sanyo
 tt2190ls.pdf pdf_icon

TT2190

Ordering number ENN7551 TT2190LS NPN Triple Diffused Planar Silicon Transistor TT2190LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079D High reliability (Adoption of HVP process). [TT2190LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9

 9.1. Size:44K  sanyo
 tt2194.pdf pdf_icon

TT2190

Ordering number ENN0000 TT2194 NPN Triple Diffused Planar Silicon Transistor TT2194 Switching Regulator Applications Preliminary Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2010C Wide ASO. [TT2194] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Em

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