TT2190 Datasheet. Specs and Replacement

Type Designator: TT2190  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO220F

 TT2190 Substitution

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TT2190 datasheet

 ..1. Size:438K  blue-rocket-elect

 tt2190.pdf pdf_icon

TT2190

TT2190(BR3DA2190F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features (V =1500V) MBIT CBO High Speed, high breakdown voltage(VCBO=1500V),high reliability(Adoption of HVP process.... See More ⇒

 0.1. Size:29K  sanyo

 tt2190ls.pdf pdf_icon

TT2190

Ordering number ENN7551 TT2190LS NPN Triple Diffused Planar Silicon Transistor TT2190LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079D High reliability (Adoption of HVP process). [TT2190LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9 ... See More ⇒

 9.1. Size:44K  sanyo

 tt2194.pdf pdf_icon

TT2190

Ordering number ENN0000 TT2194 NPN Triple Diffused Planar Silicon Transistor TT2194 Switching Regulator Applications Preliminary Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2010C Wide ASO. [TT2194] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Em... See More ⇒

Detailed specifications: S8050W, S8550A, S8550M, S8550W, TIP122L, TIP127L, TIP41P, TIP42P, 2N3906, DTC124ETA, DTC144ETA, RN1002, RN1201, RN1204, RN1205, RN1206, RN2002

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