All Transistors. TT2190 Datasheet

 

TT2190 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TT2190
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO220F

 TT2190 Transistor Equivalent Substitute - Cross-Reference Search

   

TT2190 Datasheet (PDF)

 ..1. Size:438K  blue-rocket-elect
tt2190.pdf

TT2190
TT2190

TT2190(BR3DA2190F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features (V =1500V) MBIT CBOHigh Speed, high breakdown voltage(VCBO=1500V),high reliability(Adoption of HVP process.

 0.1. Size:29K  sanyo
tt2190ls.pdf

TT2190
TT2190

Ordering number : ENN7551TT2190LSNPN Triple Diffused Planar Silicon TransistorTT2190LSColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1500V).2079D High reliability (Adoption of HVP process).[TT2190LS] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.9

 9.1. Size:44K  sanyo
tt2194.pdf

TT2190
TT2190

Ordering number : ENN0000TT2194NPN Triple Diffused Planar Silicon TransistorTT2194Switching Regulator ApplicationsPreliminaryFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2010C Wide ASO.[TT2194] Adoption of MBIT process.10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : Em

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MT6L61AS

 

 
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