2N647
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N647
Material: Ge
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 12
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 130
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 35
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO1
Búsqueda de reemplazo de transistor bipolar 2N647
2N647
Datasheet (PDF)
0.4. Size:154K jmnic
2n6477 2n6478.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to
0.5. Size:130K inchange semiconductor
2n6470 2n6471 2n6472.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
0.6. Size:59K inchange semiconductor
2n6475 2n6476.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out
0.7. Size:51K inchange semiconductor
2n6470.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
0.8. Size:120K inchange semiconductor
2n6477 2n6478.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto
0.9. Size:60K inchange semiconductor
2n6473 2n6474.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma
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