2N647 Todos los transistores

Introduzca al menos 3 números o letras

2N647 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N647

Material: Ge

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 130 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 35 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO1

Búsqueda de reemplazo de transistor bipolar 2N647

 

2N647 Datasheet (PDF)

1.1. 2n647.pdf Size:511K _rca

2N647

1.2. 2n6473 2n6474 2n6475 2n6476.pdf Size:84K _central

2N647

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.3. 2n6477.pdf Size:345K _no

2N647
2N647

1.4. 2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf Size:101K _bocasemi

2N647
2N647

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com

1.5. 2n6477 2n6478.pdf Size:154K _jmnic

2N647
2N647

JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High voltage ratings ·Excellent safe operating area APPLICATIONS ·Series and shunt regulators ·High-fidelity amplifiers ·Power switching circuits ·Solenoid drivers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2

1.6. 2n6475 2n6476.pdf Size:59K _inchange_semiconductor

2N647
2N647

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outlin

1.7. 2n6477 2n6478.pdf Size:120K _inchange_semiconductor

2N647
2N647

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ High voltage ratings Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Series and shunt regulators Ў¤ High-fidelity amplifiers Ў¤ Power switching circuits Ў¤ Solenoid drivers PINNING PIN 1 2 3 Base Collector;connected to mountin

1.8. 2n6470 2n6471 2n6472.pdf Size:130K _inchange_semiconductor

2N647
2N647

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (

1.9. 2n6473 2n6474.pdf Size:60K _inchange_semiconductor

2N647
2N647

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxim

1.10. 2n6470.pdf Size:51K _inchange_semiconductor

2N647
2N647

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain- : hFE= 20-150(Min)@IC = 5A ·Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS ·Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAM

Otros transistores... 2N6462 , 2N6463 , 2N6464 , 2N6465 , 2N6466 , 2N6467 , 2N6468 , 2N6469 , 2N5401 , 2N6470 , 2N6471 , 2N6472 , 2N647-22 , 2N6473 , 2N6474 , 2N6475 , 2N6476 .

 


2N647
  2N647
  2N647
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |


Introduzca al menos 1 números o letras