2N647 Specs and Replacement
Type Designator: 2N647
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 130 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO1
- BJT ⓘ Cross-Reference Search
2N647 datasheet
0.4. Size:154K jmnic
2n6477 2n6478.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION 1 Base Collector;connected to ... See More ⇒
0.5. Size:130K inchange semiconductor
2n6470 2n6471 2n6472.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outlin... See More ⇒
0.6. Size:59K inchange semiconductor
2n6475 2n6476.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out... See More ⇒
0.7. Size:51K inchange semiconductor
2n6470.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL ... See More ⇒
0.8. Size:120K inchange semiconductor
2n6477 2n6478.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION 1 Base Collecto... See More ⇒
0.9. Size:60K inchange semiconductor
2n6473 2n6474.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma... See More ⇒
Detailed specifications: 2N6462, 2N6463, 2N6464, 2N6465, 2N6466, 2N6467, 2N6468, 2N6469, 2SD2499, 2N6470, 2N6471, 2N6472, 2N647-22, 2N6473, 2N6474, 2N6475, 2N6476
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