2N6477 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6477
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.2 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2N6477
2N6477 Datasheet (PDF)
2n6477 2n6478.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to
2n6477 2n6478.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto
2n6473 2n6474 2n6475 2n6476.pdf
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2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf
Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com
2n6470 2n6471 2n6472.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
2n6475 2n6476.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out
2n6470.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
2n6473 2n6474.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma
Otros transistores... 2N6470 , 2N6471 , 2N6472 , 2N647-22 , 2N6473 , 2N6474 , 2N6475 , 2N6476 , D965 , 2N6478 , 2N6478A , 2N6479 , 2N6480 , 2N6481 , 2N6482 , 2N6486 , 2N6487 .
