2N6477 Datasheet. Specs and Replacement
Type Designator: 2N6477 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220
📄📄 Copy
2N6477 Substitution
- BJT ⓘ Cross-Reference Search
2N6477 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION 1 Base Collector;connected to ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION 1 Base Collecto... See More ⇒
Detailed specifications: 2N6470, 2N6471, 2N6472, 2N647-22, 2N6473, 2N6474, 2N6475, 2N6476, 2SB817, 2N6478, 2N6478A, 2N6479, 2N6480, 2N6481, 2N6482, 2N6486, 2N6487
Keywords - 2N6477 pdf specs
2N6477 cross reference
2N6477 equivalent finder
2N6477 pdf lookup
2N6477 substitution
2N6477 replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
irf 3205 | 2n5088 equivalent | d882 transistor | 2n3771 | s9018 | 2n3904 equivalent | ksa1220 | s9015





