L2SC5658RM3T5G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SC5658RM3T5G  📄📄 

Código: RM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.26 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: SOT723

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L2SC5658RM3T5G datasheet

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 l2sc5658rm3t5g.pdf pdf_icon

L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h

 6.1. Size:330K  lrc
 l2sc5658qm3t5g.pdf pdf_icon

L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h

 8.1. Size:44K  lrc
 l2sc5635lt1g.pdf pdf_icon

L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements;

 8.2. Size:2204K  lrc
 l2sc5635wt1g.pdf pdf_icon

L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

MOSTRAR MÁS

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