L2SC5658RM3T5G Specs and Replacement

Type Designator: L2SC5658RM3T5G

SMD Transistor Code: RM

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.26 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT723

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L2SC5658RM3T5G datasheet

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L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h... See More ⇒

 6.1. Size:330K  lrc

l2sc5658qm3t5g.pdf pdf_icon

L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h... See More ⇒

 8.1. Size:44K  lrc

l2sc5635lt1g.pdf pdf_icon

L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements; ... See More ⇒

 8.2. Size:2204K  lrc

l2sc5635wt1g.pdf pdf_icon

L2SC5658RM3T5G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC... See More ⇒

Detailed specifications: L2SC4083PT1G, L2SC4083PWT1G, L2SC4083QWT1G, L2SC4617QT1G, L2SC4617RT1G, L2SC4617ST1G, L2SC5635WT1G, L2SC5658QM3T5G, TIP2955, L2SD1781KRLT1G, L2SD2114KVLT1G, L2SD2114KWLT1G, L2SD882P, L2SD882Q, L8050HPLT1G, L8050HQLT1G, L8050HRLT1G

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