L8550HPLT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L8550HPLT1G
Código: 1HB
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar L8550HPLT1G
L8550HPLT1G
Datasheet (PDF)
..1. Size:84K lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir
..2. Size:89K lrc
l8550hplt1g.pdf
LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem
8.1. Size:84K lrc
l8550hrlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir
8.2. Size:85K lrc
l8550hqlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir
8.3. Size:83K lrc
l8550hslt1g.pdf
LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesS-L8550HPLT1GPNP SiliconFEATURESeries High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir
8.4. Size:978K cn yongyutai
l8550hq.pdf
L8550HQGeneral Purpose TransistorsPNP SiliconFEATURECOLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1BASE2EMITTERMAXIMUM RATINGSRating Symbol Max UnitCollector-Emitter Voltage V -25 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5 VCollecto
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