All Transistors. L8550HPLT1G Datasheet

 

L8550HPLT1G Datasheet and Replacement


   Type Designator: L8550HPLT1G
   SMD Transistor Code: 1HB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
 

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L8550HPLT1G Datasheet (PDF)

 ..1. Size:84K  lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 ..2. Size:89K  lrc
l8550hplt1g.pdf pdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem

 ..3. Size:84K  lrc
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 8.1. Size:84K  lrc
l8550hrlt1g.pdf pdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

Datasheet: L2SD2114KWLT1G , L2SD882P , L2SD882Q , L8050HPLT1G , L8050HQLT1G , L8050HRLT1G , L8050PLT1G , L8050QLT1G , 13001-A , L8550HQLT1G , L8550HRLT1G , L8550PLT1G , L8550QLT1G , L9012PLT1G , L9012QLT1G , L9012RLT1G , L9012SLT1G .

History: TIP621 | 2SC2904 | T1888 | SUR542EF | KTD8303A9 | 2SC4085 | 2SC9018

Keywords - L8550HPLT1G transistor datasheet

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