Справочник транзисторов. L8550HPLT1G

 

Биполярный транзистор L8550HPLT1G Даташит. Аналоги


   Наименование производителя: L8550HPLT1G
   Маркировка: 1HB
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT23
 

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L8550HPLT1G Datasheet (PDF)

 ..1. Size:84K  lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdfpdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 ..2. Size:89K  lrc
l8550hplt1g.pdfpdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem

 ..3. Size:84K  lrc
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdfpdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 8.1. Size:84K  lrc
l8550hrlt1g.pdfpdf_icon

L8550HPLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

Другие транзисторы... L2SD2114KWLT1G , L2SD882P , L2SD882Q , L8050HPLT1G , L8050HQLT1G , L8050HRLT1G , L8050PLT1G , L8050QLT1G , 13001-A , L8550HQLT1G , L8550HRLT1G , L8550PLT1G , L8550QLT1G , L9012PLT1G , L9012QLT1G , L9012RLT1G , L9012SLT1G .

History: MZ0912B50Y | 2SC1873

 

 
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