LMBT6427LT1G Todos los transistores

 

LMBT6427LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LMBT6427LT1G

Código: 1V

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 10000

Encapsulados: SOT23

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LMBT6427LT1G datasheet

 ..1. Size:238K  lrc
lmbt6427lt1g.pdf pdf_icon

LMBT6427LT1G

LESHAN RADIO COMPANY, LTD. Darlington Transistors NPN Silicon LMBT6427LT1G We declare that the material of product . compliance with RoHS requirements. S-LMBT6427LT1G S- Prefix for Automotive and Other Applications Requiring . Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 Ordering Information Device Marking Shipping 1 LMBT6427LT1G 300

 7.1. Size:280K  lrc
lmbt6429lt1g.pdf pdf_icon

LMBT6427LT1G

LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon We declare that the material of product LMBT6428LT1G compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1G Unique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1G Qualified and PPAP Capable. ORDERING INFORMATION S-LMBT6429LT1G Device Marking Shipping (S

 7.2. Size:352K  lrc
lmbt6428lt1g lmbt6428lt3g.pdf pdf_icon

LMBT6427LT1G

LMBT6428LT1G S-LMBT6428LT1G Amplifier Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. SOT23 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Ship

 7.3. Size:282K  lrc
lmbt6428lt1g.pdf pdf_icon

LMBT6427LT1G

LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon We declare that the material of product LMBT6428LT1G compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1G Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT6428LT1G ORDERING INFORMATION S-LMBT6429LT1G Device Marking Shipping (

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History: BSS65R | 2SA1216O | 2SA1055 | BSV25K | 2SC3325O | 2SC3242A | ZTX3709M

 

 

 

 

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