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LMBT6427LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LMBT6427LT1G
   Código: 1V
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 10000
   Paquete / Cubierta: SOT23
 

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LMBT6427LT1G Datasheet (PDF)

 ..1. Size:238K  lrc
 lmbt6427lt1g.pdf pdf_icon

LMBT6427LT1G

LESHAN RADIO COMPANY, LTD.Darlington TransistorsNPN SiliconLMBT6427LT1G We declare that the material of product. compliance with RoHS requirements.S-LMBT6427LT1GS- Prefix for Automotive and Other Applications Requiring . Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering InformationDevice Marking Shipping1LMBT6427LT1G300

 7.1. Size:280K  lrc
 lmbt6429lt1g.pdf pdf_icon

LMBT6427LT1G

LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1GQualified and PPAP Capable.ORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(S

 7.2. Size:352K  lrc
 lmbt6428lt1g lmbt6428lt3g.pdf pdf_icon

LMBT6427LT1G

LMBT6428LT1GS-LMBT6428LT1GAmplifier Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Ship

 7.3. Size:282K  lrc
 lmbt6428lt1g.pdf pdf_icon

LMBT6427LT1G

LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT6428LT1GORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(

MOSTRAR MÁS

Otros transistores... LMBT2506QLT1G , LMBT2516QLT1G , LMBT5087LT1G , LMBT5401DW1T1G , LMBT5401LT1G , LMBT5541DW1T1G , LMBT5551DW1T1G , LMBT5551LT1G , BD136 , LMBT6428LT1G , LMBT6517LT1G , LMBT6520LT1G , LMBT918LT1G , LMBT2222ADW1T1G , LMBT2222ALT1G , LMBT2222ATT1G , LMBT2222AWT1G .

 

 
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