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LMBT6427LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LMBT6427LT1G
   SMD Transistor Code: 1V
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: SOT23

 LMBT6427LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

LMBT6427LT1G Datasheet (PDF)

 ..1. Size:238K  lrc
lmbt6427lt1g.pdf

LMBT6427LT1G
LMBT6427LT1G

LESHAN RADIO COMPANY, LTD.Darlington TransistorsNPN SiliconLMBT6427LT1G We declare that the material of product. compliance with RoHS requirements.S-LMBT6427LT1GS- Prefix for Automotive and Other Applications Requiring . Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering InformationDevice Marking Shipping1LMBT6427LT1G300

 7.1. Size:280K  lrc
lmbt6429lt1g.pdf

LMBT6427LT1G
LMBT6427LT1G

LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1GQualified and PPAP Capable.ORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(S

 7.2. Size:352K  lrc
lmbt6428lt1g lmbt6428lt3g.pdf

LMBT6427LT1G
LMBT6427LT1G

LMBT6428LT1GS-LMBT6428LT1GAmplifier Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Ship

 7.3. Size:282K  lrc
lmbt6428lt1g.pdf

LMBT6427LT1G
LMBT6427LT1G

LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT6428LT1GORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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