LMBT6427LT1G Specs and Replacement
Type Designator: LMBT6427LT1G
SMD Transistor Code: 1V
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Package: SOT23
LMBT6427LT1G Substitution
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LMBT6427LT1G datasheet
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LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon We declare that the material of product LMBT6428LT1G compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1G Unique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1G Qualified and PPAP Capable. ORDERING INFORMATION S-LMBT6429LT1G Device Marking Shipping (S... See More ⇒
LMBT6428LT1G S-LMBT6428LT1G Amplifier Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. SOT23 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Ship... See More ⇒
LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon We declare that the material of product LMBT6428LT1G compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1G Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT6428LT1G ORDERING INFORMATION S-LMBT6429LT1G Device Marking Shipping (... See More ⇒
Detailed specifications: LMBT2506QLT1G, LMBT2516QLT1G, LMBT5087LT1G, LMBT5401DW1T1G, LMBT5401LT1G, LMBT5541DW1T1G, LMBT5551DW1T1G, LMBT5551LT1G, BD136, LMBT6428LT1G, LMBT6517LT1G, LMBT6520LT1G, LMBT918LT1G, LMBT2222ADW1T1G, LMBT2222ALT1G, LMBT2222ATT1G, LMBT2222AWT1G
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