LMBT6428LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LMBT6428LT1G
   Código: 1KM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar LMBT6428LT1G

LMBT6428LT1G Datasheet (PDF)

..1. Size:352K lrc
lmbt6428lt1g lmbt6428lt3g.pdf

LMBT6428LT1GS-LMBT6428LT1GAmplifier Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Ship

..2. Size:282K lrc
lmbt6428lt1g.pdf

LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT6428LT1GORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(

7.1. Size:280K lrc
lmbt6429lt1g.pdf

LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1GQualified and PPAP Capable.ORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(S

7.2. Size:238K lrc
lmbt6427lt1g.pdf

LESHAN RADIO COMPANY, LTD.Darlington TransistorsNPN SiliconLMBT6427LT1G We declare that the material of product. compliance with RoHS requirements.S-LMBT6427LT1GS- Prefix for Automotive and Other Applications Requiring . Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering InformationDevice Marking Shipping1LMBT6427LT1G300

9.1. Size:248K lrc
lmbt6517lt1g lmbt6517lt3g.pdf

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO

9.2. Size:248K lrc
lmbt6520lt1g lmbt6520lt3g.pdf

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&

9.3. Size:248K lrc
lmbt6517lt1g.pdf