LMBT6428LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LMBT6428LT1G
SMD Transistor Code: 1KM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT23
LMBT6428LT1G Transistor Equivalent Substitute - Cross-Reference Search
LMBT6428LT1G Datasheet (PDF)
lmbt6428lt1g lmbt6428lt3g.pdf
LMBT6428LT1GS-LMBT6428LT1GAmplifier Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Ship
lmbt6428lt1g.pdf
LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT6428LT1GORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(
lmbt6429lt1g.pdf
LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1GQualified and PPAP Capable.ORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(S
lmbt6427lt1g.pdf
LESHAN RADIO COMPANY, LTD.Darlington TransistorsNPN SiliconLMBT6427LT1G We declare that the material of product. compliance with RoHS requirements.S-LMBT6427LT1GS- Prefix for Automotive and Other Applications Requiring . Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering InformationDevice Marking Shipping1LMBT6427LT1G300
lmbt6517lt1g lmbt6517lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO
lmbt6520lt1g lmbt6520lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&
lmbt6517lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO
lmbt6520lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .