LMBT6517LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT6517LT1G
Código: 1Z
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 350
V
Tensión colector-emisor (Vce): 350
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar LMBT6517LT1G
LMBT6517LT1G
Datasheet (PDF)
..1. Size:248K lrc
lmbt6517lt1g lmbt6517lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO
..2. Size:248K lrc
lmbt6517lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO
8.1. Size:248K lrc
lmbt6520lt1g lmbt6520lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&
8.2. Size:248K lrc
lmbt6520lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&
9.1. Size:280K lrc
lmbt6429lt1g.pdf
LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1GQualified and PPAP Capable.ORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(S
9.2. Size:352K lrc
lmbt6428lt1g lmbt6428lt3g.pdf
LMBT6428LT1GS-LMBT6428LT1GAmplifier Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Ship
9.3. Size:238K lrc
lmbt6427lt1g.pdf
LESHAN RADIO COMPANY, LTD.Darlington TransistorsNPN SiliconLMBT6427LT1G We declare that the material of product. compliance with RoHS requirements.S-LMBT6427LT1GS- Prefix for Automotive and Other Applications Requiring . Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering InformationDevice Marking Shipping1LMBT6427LT1G300
9.4. Size:282K lrc
lmbt6428lt1g.pdf
LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT6428LT1GORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(
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