LMBT6517LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LMBT6517LT1G  📄📄 

Código: 1Z

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT23

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LMBT6517LT1G datasheet

 ..1. Size:248K  lrc
 lmbt6517lt1g lmbt6517lt3g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G We declare that the material of product S-LMBT6517LT1G compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6 517LT1G 3000/Tape&Reel 1Z S-LMBT6 517LT1G 1 LMBT6517LT3G 10000/Tape&Reel 1Z 2 S-LMBT6517LT3G SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 COLLECTO

 ..2. Size:248K  lrc
 lmbt6517lt1g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G We declare that the material of product S-LMBT6517LT1G compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6 517LT1G 3000/Tape&Reel 1Z S-LMBT6 517LT1G 1 LMBT6517LT3G 10000/Tape&Reel 1Z 2 S-LMBT6517LT3G SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 COLLECTO

 8.1. Size:248K  lrc
 lmbt6520lt1g lmbt6520lt3g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. S-LMBT6520LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 Ordering Information 1 Device Marking Shipping 2 LMBT6520LT1G 3000/Tape&

 8.2. Size:248K  lrc
 lmbt6520lt1g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. S-LMBT6520LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 Ordering Information 1 Device Marking Shipping 2 LMBT6520LT1G 3000/Tape&

MOSTRAR MÁS

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