All Transistors. LMBT6517LT1G Datasheet

 

LMBT6517LT1G Datasheet and Replacement


   Type Designator: LMBT6517LT1G
   SMD Transistor Code: 1Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT23
 

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LMBT6517LT1G Datasheet (PDF)

 ..1. Size:248K  lrc
lmbt6517lt1g lmbt6517lt3g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO

 ..2. Size:248K  lrc
lmbt6517lt1g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO

 8.1. Size:248K  lrc
lmbt6520lt1g lmbt6520lt3g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&

 8.2. Size:248K  lrc
lmbt6520lt1g.pdf pdf_icon

LMBT6517LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&

Datasheet: LMBT5087LT1G , LMBT5401DW1T1G , LMBT5401LT1G , LMBT5541DW1T1G , LMBT5551DW1T1G , LMBT5551LT1G , LMBT6427LT1G , LMBT6428LT1G , 2SD882 , LMBT6520LT1G , LMBT918LT1G , LMBT2222ADW1T1G , LMBT2222ALT1G , LMBT2222ATT1G , LMBT2222AWT1G , LMBT2907ADW1T1G , LMBT2907ALT1G .

History: DTC115EN3 | SPS4084 | BF214B | KT919G | KRA106 | AL102-6 | INA5005AC1

Keywords - LMBT6517LT1G transistor datasheet

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