LMBT2222ATT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT2222ATT1G
Código: 1P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC89
Búsqueda de reemplazo de LMBT2222ATT1G
LMBT2222ATT1G Datasheet (PDF)
lmbt2222att1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2222att1g lmbt2222att3g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2222alt1g lmbt2222alt3g.pdf

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev
lmbt2222awt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a
Otros transistores... LMBT5551LT1G , LMBT6427LT1G , LMBT6428LT1G , LMBT6517LT1G , LMBT6520LT1G , LMBT918LT1G , LMBT2222ADW1T1G , LMBT2222ALT1G , 2SC5200 , LMBT2222AWT1G , LMBT2907ADW1T1G , LMBT2907ALT1G , LMBT2907AWT1G , LMBT3904DW1T1G , LMBT3904LT1G , LMBT3904N3T5G , LMBT3904TT1G .
History: BDW36 | DRAF144T | 2SC1003A | KT626V | 2SA1480C | 2SC3284 | 2SC5294A
History: BDW36 | DRAF144T | 2SC1003A | KT626V | 2SA1480C | 2SC3284 | 2SC5294A



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