All Transistors. LMBT2222ATT1G Datasheet

 

LMBT2222ATT1G Datasheet and Replacement


   Type Designator: LMBT2222ATT1G
   SMD Transistor Code: 1P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC89
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LMBT2222ATT1G Datasheet (PDF)

 ..1. Size:117K  lrc
lmbt2222att1g.pdf pdf_icon

LMBT2222ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

 ..2. Size:117K  lrc
lmbt2222att1g lmbt2222att3g.pdf pdf_icon

LMBT2222ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

 5.1. Size:631K  lrc
lmbt2222alt1g lmbt2222alt3g.pdf pdf_icon

LMBT2222ATT1G

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev

 5.2. Size:62K  lrc
lmbt2222awt1g.pdf pdf_icon

LMBT2222ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: M1

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