LMBT2222ATT1G. Аналоги и основные параметры
Наименование производителя: LMBT2222ATT1G
Маркировка: 1P
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SC89
Аналоги (замена) для LMBT2222ATT1G
- подборⓘ биполярного транзистора по параметрам
LMBT2222ATT1G даташит
lmbt2222att1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2222att1g lmbt2222att3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2222alt1g lmbt2222alt3g.pdf
LMBT2222ALT1G S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Dev
lmbt2222awt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are LMBT2222AWT1G housed in the SOT 323/SC 70 package which S-LMBT2222AWT1G is designed for low power surface mount applications. We declare that the material of product 3 compliance with RoHS requirements. S- Prefix for Automotive a
Другие транзисторы: LMBT5551LT1G, LMBT6427LT1G, LMBT6428LT1G, LMBT6517LT1G, LMBT6520LT1G, LMBT918LT1G, LMBT2222ADW1T1G, LMBT2222ALT1G, BD222, LMBT2222AWT1G, LMBT2907ADW1T1G, LMBT2907ALT1G, LMBT2907AWT1G, LMBT3904DW1T1G, LMBT3904LT1G, LMBT3904N3T5G, LMBT3904TT1G
History: BC284B | 2SB983 | 2SC3296 | EFT319 | 2SB1116 | 2SC32 | ZXTP07040DFF
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