LMBT3904LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT3904LT1G
Código: 1AM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar LMBT3904LT1G
LMBT3904LT1G
Datasheet (PDF)
..1. Size:590K lrc
lmbt3904lt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904LT1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU
..2. Size:643K lrc
lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes aLMBT3904LT1GPb-Free Lead FinishS-LMBT3904LT1G We declare that the material of product compliance with RoHSrequirements. S- Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable
..3. Size:358K lrc
lmbt3904lt1g lmbt3904lt3g.pdf
LMBT3904LT1GS-LMBT3904LT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic
..4. Size:243K inchange semiconductor
lmbt3904lt1g.pdf
isc Silicon NPN RF Transistor LMBT3904LT1GDESCRIPTIONLow Noise FigureNF = 5 dB(MAX)@V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0kCE C SMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
6.1. Size:414K lrc
lmbt3904n3t5g.pdf
LMBT3904N3T5GS-LMBT3904N3T5GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT883 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mar
6.2. Size:222K lrc
lmbt3904tt1g lmbt3904tt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking
6.3. Size:221K lrc
lmbt3904tt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking
6.4. Size:554K lrc
lmbt3904dw1t1g lmbt3904dw1t3g.pdf
LMBT3904DW1T1GS-LMBT3904DW1T1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VSimplifi
6.5. Size:616K lrc
lmbt3904wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904W T1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904W T1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable.1DEVICE MARKING AND RESISTOR
6.6. Size:471K lrc
lmbt3904wt1g lmbt3904wt3g.pdf
LMBT3904WT1GS-LMBT3904WT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic
6.7. Size:506K lrc
lmbt3904dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors The LMBT3904DW1T1G device is a spinoff of our popularLMBT3904DW1T1GSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT363S-LMBT3904DW1T1Gsixleaded surface mount package. By putting two discrete devicesin one package , this device is ideal fo
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