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LMBT3904LT1G Specs and Replacement

Type Designator: LMBT3904LT1G

SMD Transistor Code: 1AM

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

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LMBT3904LT1G datasheet

 ..1. Size:590K  lrc

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LMBT3904LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904LT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904LT1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU... See More ⇒

 ..2. Size:643K  lrc

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LMBT3904LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes a LMBT3904LT1G Pb-Free Lead Finish S-LMBT3904LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable... See More ⇒

 ..3. Size:358K  lrc

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LMBT3904LT1G

LMBT3904LT1G S-LMBT3904LT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic... See More ⇒

 ..4. Size:243K  inchange semiconductor

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LMBT3904LT1G

isc Silicon NPN RF Transistor LMBT3904LT1G DESCRIPTION Low Noise Figure NF = 5 dB(MAX) @V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0k CE C S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

Detailed specifications: LMBT2222ADW1T1G, LMBT2222ALT1G, LMBT2222ATT1G, LMBT2222AWT1G, LMBT2907ADW1T1G, LMBT2907ALT1G, LMBT2907AWT1G, LMBT3904DW1T1G, 2N2222, LMBT3904N3T5G, LMBT3904TT1G, LMBT3904WT1G, LMBT3906DW1T1G, LMBT3906LT1G, LMBT3906TT1G, LMBT3906WT1G, LMBT3908LT1G

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