DTC317 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC317
Código: 8N
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.202 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar DTC317
DTC317 Datasheet (PDF)
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dtc314tu.pdf
TransistorsDigital transistors (built-in resistor)DTC314TU / DTC314TK / DTC314TSFFeatures FExternal dimensions (Units: mm)In addition to the features of regular dig-ital transistors,1) Low saturation voltage, typicallyVCE(sat) = 40mV at IC / IB = 50mA /2.5mA, makes these transistorsideal for muting circuits.2) These transistors can be used athigh current levels, IC = 600mA
chdtc314tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
chdtc314tugp.pdf
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