Биполярный транзистор DTC317 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTC317
Маркировка: 8N
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.202 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: SOT323
DTC317 Datasheet (PDF)
dtc301-dtc311 dtc317 dtc322 dtc323.pdf
DTC301~311 / DTC317SEMICONDUCTORTECHNICAL DATA DTC322~323Bias Resistor TransistorsNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti
dtc314tk dtc314tu-tk h04 sot323 346.pdf
TransistorsDigital transistors (built-in resistor)DTC314TU / DTC314TK / DTC314TSFFeatures FExternal dimensions (Units: mm)In addition to the features of regular dig-ital transistors,1) Low saturation voltage, typicallyVCE(sat) = 40mV at IC / IB = 50mA /2.5mA, makes these transistorsideal for muting circuits.2) These transistors can be used athigh current levels, IC = 600mA
dtc314tu.pdf
TransistorsDigital transistors (built-in resistor)DTC314TU / DTC314TK / DTC314TSFFeatures FExternal dimensions (Units: mm)In addition to the features of regular dig-ital transistors,1) Low saturation voltage, typicallyVCE(sat) = 40mV at IC / IB = 50mA /2.5mA, makes these transistorsideal for muting circuits.2) These transistors can be used athigh current levels, IC = 600mA
chdtc314tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA
chdtc314tugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC314TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at I
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