All Transistors. DTC317 Datasheet

 

DTC317 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTC317
   SMD Transistor Code: 8N
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.202 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SOT323

 DTC317 Transistor Equivalent Substitute - Cross-Reference Search

   

DTC317 Datasheet (PDF)

 ..1. Size:584K  first silicon
dtc301-dtc311 dtc317 dtc322 dtc323.pdf

DTC317
DTC317

DTC301~311 / DTC317SEMICONDUCTORTECHNICAL DATA DTC322~323Bias Resistor TransistorsNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti

 9.1. Size:66K  rohm
dtc314tk dtc314tu-tk h04 sot323 346.pdf

DTC317
DTC317

TransistorsDigital transistors (built-in resistor)DTC314TU / DTC314TK / DTC314TSFFeatures FExternal dimensions (Units: mm)In addition to the features of regular dig-ital transistors,1) Low saturation voltage, typicallyVCE(sat) = 40mV at IC / IB = 50mA /2.5mA, makes these transistorsideal for muting circuits.2) These transistors can be used athigh current levels, IC = 600mA

 9.2. Size:66K  rohm
dtc314tu.pdf

DTC317
DTC317

TransistorsDigital transistors (built-in resistor)DTC314TU / DTC314TK / DTC314TSFFeatures FExternal dimensions (Units: mm)In addition to the features of regular dig-ital transistors,1) Low saturation voltage, typicallyVCE(sat) = 40mV at IC / IB = 50mA /2.5mA, makes these transistorsideal for muting circuits.2) These transistors can be used athigh current levels, IC = 600mA

 9.3. Size:90K  chenmko
chdtc314tkgp.pdf

DTC317
DTC317

CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 9.4. Size:95K  chenmko
chdtc314tugp.pdf

DTC317
DTC317

CHENMKO ENTERPRISE CO.,LTDCHDTC314TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at I

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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