DTD118 Todos los transistores

 

DTD118 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTD118
   Código: F62
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar DTD118

 

DTD118 Datasheet (PDF)

 ..1. Size:70K  first silicon
dtd118.pdf

DTD118
DTD118

SEMICONDUCTORDTD118TECHNICAL DATADigital transistors (built-in resistors) Features1) Built-in bias resistors enable the configuration of an inverterOUTcircuit without connecting external input resistors (see theequivalent circuit).GND2) The bias resistors consist of thin-film resistors with completeisolation to allow negative biasing of the input. They also have INthe

 9.1. Size:49K  motorola
pdtd114et 4.pdf

DTD118
DTD118

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

 9.2. Size:49K  philips
pdtd114et 4.pdf

DTD118
DTD118

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

 9.3. Size:64K  philips
pdtd113zt.pdf

DTD118
DTD118

PDTD113ZTNPN 500 mA, 50 V resistor-equipped transistor;R1 = 1 k, R2 = 10 kRev. 02 23 March 2009 Product data sheet1. Product profile1.1 General descriptionNPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-MountedDevice (SMD) plastic package.PNP complement: PDTB113ZT.1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des

 9.4. Size:123K  philips
pdtd113e ser.pdf

DTD118
DTD118

PDTD113E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD113EK SOT346 SC-59A TO-236 PDTB113EKPDTD113ES[1] SOT54 SC-43A TO-92 PDT

 9.5. Size:123K  nxp
pdtd113ek pdtd113es.pdf

DTD118
DTD118

PDTD113E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD113EK SOT346 SC-59A TO-236 PDTB113EKPDTD113ES[1] SOT54 SC-43A TO-92 PDT

 9.6. Size:84K  rohm
dtd114es dtd114ek.pdf

DTD118
DTD118

DTD114EK / DTD114ES Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD114EK / DTD114ES Applications External dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD114EK0.4 0.8(3) Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (2) (1)(see equivalent circui

 9.7. Size:77K  rohm
dtd113zs.pdf

DTD118
DTD118

DTD113ZK / DTD113ZU / DTD113ZS Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD113ZK / DTD113ZU / DTD113ZS External dimensions (Unit : mm) Applications Inverter, Interface, Driver 2.9 1.1DTD113ZK 0.4 0.8(3) Features 1) Built-in bias resistors enable theconfiguration of an ( ) (1)2inverter circuit without connecting external input 0.95

 9.8. Size:139K  rohm
dtd113zk-zk dtd113zk.pdf

DTD118
DTD118

500mA / 50V Digital transistors (with built-in resistors) DTD113ZK / DTD113ZU Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD113ZK0.4 0.8(3) Features 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input (2) (1)resistors (see equivalent circuit). 0.95 0.952) The bias resisto

 9.9. Size:333K  rohm
dtd114gk.pdf

DTD118
DTD118

DTD114GKDatasheetNPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueCollector VCEO50VBase IC500mAEmitter R 10kWDTD114GK SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (s

 9.10. Size:41K  rohm
dtd114gk l24 sot23.pdf

DTD118

(96-292-B

 9.11. Size:136K  rohm
dtd113ek.pdf

DTD118
DTD118

500mA / 50V Digital transistors (with built-in resistors) DTD113EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD113EK0.4 0.8 Features ( )31)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1)2)The bias resistors consist of thin-f

 9.12. Size:60K  rohm
dtd113es dtd113ek.pdf

DTD118
DTD118

TransistorsDigital transistors (built-in resistors)DTD113EK / DTD113ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasing of theinput. They

 9.13. Size:159K  rohm
dtd114ek.pdf

DTD118
DTD118

500mA / 50V Digital transistors (with built-in resistors) DTD114EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD114EK0.4 0.8 Features (3)1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1)2)The bias resistors consist of thin-film

 9.14. Size:70K  diodes
ddtd113zc.pdf

DTD118
DTD118

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 9.15. Size:167K  diodes
ddtd114tu.pdf

DTD118
DTD118

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 9.16. Size:167K  diodes
ddtd113eu.pdf

DTD118
DTD118

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 9.17. Size:70K  diodes
ddtd114ec.pdf

DTD118
DTD118

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 9.18. Size:70K  diodes
ddtd113ec.pdf

DTD118
DTD118

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 9.19. Size:167K  diodes
ddtd114gu.pdf

DTD118
DTD118

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 9.20. Size:167K  diodes
ddtd113zu.pdf

DTD118
DTD118

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 9.21. Size:70K  diodes
ddtd114tc.pdf

DTD118
DTD118

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 9.22. Size:167K  diodes
ddtd114eu.pdf

DTD118
DTD118

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 9.23. Size:70K  diodes
ddtd114gc.pdf

DTD118
DTD118

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 9.24. Size:165K  utc
dtd114e.pdf

DTD118
DTD118

UNISONIC TECHNOLOGIES CO., LTD DTD114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

 9.25. Size:186K  utc
dtd113z.pdf

DTD118
DTD118

UNISONIC TECHNOLOGIES CO., LTD DTD113Z NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR 33(BUILT- IN BIAS RESISTORS) 1122SOT-523 FEATURES SOT-323* Built-in bias resistors that implies easy ON/OFF applications. 3* The bias resistors are thin-film resistors with complete isolation to allow negative input. 1 EQUIVALENT CIRCUIT 2SOT-231TO-92 ORDERING IN

 9.26. Size:145K  jiangsu
dtd113zua.pdf

DTD118

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTD113ZUA DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of

 9.27. Size:142K  cystek
dtd114ea3.pdf

DTD118
DTD118

Spec. No. : C377A3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date :2004.03.03 Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EA3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 9.28. Size:150K  cystek
dtd114en3.pdf

DTD118
DTD118

Spec. No. : C377N3 Issued Date : 2004.01.15 CYStech Electronics Corp. Revised Date : Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

 9.29. Size:151K  cystek
dtd113zn3.pdf

DTD118
DTD118

Spec. No. : C379N3 Issued Date : 2003.10.05 CYStech Electronics Corp. Revised Date : 2004.02.26 Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTD113ZN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w

 9.30. Size:350K  lrc
ldtd113eet1g.pdf

DTD118
DTD118

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD113EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 9.31. Size:357K  lrc
ldtd113zet1g.pdf

DTD118
DTD118

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD113ZET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 9.32. Size:345K  lrc
ldtd114eet1g.pdf

DTD118
DTD118

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD114EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 9.33. Size:314K  lrc
ldtd114gkt1g.pdf

DTD118
DTD118

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD114GKT1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 9.34. Size:982K  kexin
dtd114e.pdf

DTD118
DTD118

SMD Type TransistorsDigital TransistorsDTD114E (KDTD114E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.

 9.35. Size:1000K  kexin
dtd113z.pdf

DTD118
DTD118

SMD Type TransistorsDigital TransistorsDTD113Z (KDTD113Z)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.1+0.050.95-0.1 0.1-0.01+0.1 isola

 9.36. Size:172K  chenmko
chdtd113zugp.pdf

DTD118
DTD118

CHENMKO ENTERPRISE CO.,LTDCHDTD113ZUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 9.37. Size:58K  chenmko
chdtd114gkgp.pdf

DTD118
DTD118

CHENMKO ENTERPRISE CO.,LTDCHDTD114GKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 9.38. Size:113K  chenmko
chdtd113ekgp.pdf

DTD118
DTD118

CHENMKO ENTERPRISE CO.,LTDCHDTD113EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 9.39. Size:99K  chenmko
chdtd114ekgp.pdf

DTD118
DTD118

CHENMKO ENTERPRISE CO.,LTDCHDTD114EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 9.40. Size:139K  chenmko
chdtd113zkgp.pdf

DTD118
DTD118

CHENMKO ENTERPRISE CO.,LTDCHDTD113ZKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

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