DTD118 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTD118
Código: F62
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.22
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 56
Encapsulados: SOT23
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DTD118 datasheet
..1. Size:70K first silicon
dtd118.pdf 
SEMICONDUCTOR DTD118 TECHNICAL DATA Digital transistors (built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter OUT circuit without connecting external input resistors (see the equivalent circuit). GND 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have IN the
9.1. Size:49K motorola
pdtd114et 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo
9.2. Size:49K philips
pdtd114et 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo
9.3. Size:64K philips
pdtd113zt.pdf
PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 k , R2 = 10 k Rev. 02 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package. PNP complement PDTB113ZT. 1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des
9.4. Size:123K philips
pdtd113e ser.pdf
PDTD113E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD113EK SOT346 SC-59A TO-236 PDTB113EK PDTD113ES[1] SOT54 SC-43A TO-92 PDT
9.5. Size:123K nxp
pdtd113ek pdtd113es.pdf
PDTD113E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD113EK SOT346 SC-59A TO-236 PDTB113EK PDTD113ES[1] SOT54 SC-43A TO-92 PDT
9.6. Size:84K rohm
dtd114es dtd114ek.pdf
DTD114EK / DTD114ES Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD114EK / DTD114ES Applications External dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD114EK 0.4 0.8 (3) Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (2) (1) (see equivalent circui
9.7. Size:77K rohm
dtd113zs.pdf
DTD113ZK / DTD113ZU / DTD113ZS Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD113ZK / DTD113ZU / DTD113ZS External dimensions (Unit mm) Applications Inverter, Interface, Driver 2.9 1.1 DTD113ZK 0.4 0.8 (3) Features 1) Built-in bias resistors enable theconfiguration of an ( ) (1) 2 inverter circuit without connecting external input 0.95
9.8. Size:139K rohm
dtd113zk-zk dtd113zk.pdf
500mA / 50V Digital transistors (with built-in resistors) DTD113ZK / DTD113ZU Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD113ZK 0.4 0.8 (3) Features 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input (2) (1) resistors (see equivalent circuit). 0.95 0.95 2) The bias resisto
9.9. Size:333K rohm
dtd114gk.pdf
DTD114GK Datasheet NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline SMT3 Parameter Value Collector VCEO 50V Base IC 500mA Emitter R 10kW DTD114GK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (s
9.11. Size:136K rohm
dtd113ek.pdf
500mA / 50V Digital transistors (with built-in resistors) DTD113EK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD113EK 0.4 0.8 Features ( ) 3 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1) 2)The bias resistors consist of thin-f
9.12. Size:60K rohm
dtd113es dtd113ek.pdf
Transistors Digital transistors (built-in resistors) DTD113EK / DTD113ES FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing of the input. They
9.13. Size:159K rohm
dtd114ek.pdf
500mA / 50V Digital transistors (with built-in resistors) DTD114EK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD114EK 0.4 0.8 Features (3) 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1) 2)The bias resistors consist of thin-film
9.14. Size:70K diodes
ddtd113zc.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.15. Size:167K diodes
ddtd114tu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.16. Size:167K diodes
ddtd113eu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.17. Size:70K diodes
ddtd114ec.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.18. Size:70K diodes
ddtd113ec.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.19. Size:167K diodes
ddtd114gu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.20. Size:167K diodes
ddtd113zu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.21. Size:70K diodes
ddtd114tc.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.22. Size:167K diodes
ddtd114eu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
9.23. Size:70K diodes
ddtd114gc.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
9.24. Size:165K utc
dtd114e.pdf
UNISONIC TECHNOLOGIES CO., LTD DTD114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
9.25. Size:186K utc
dtd113z.pdf
UNISONIC TECHNOLOGIES CO., LTD DTD113Z NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR 3 3 (BUILT- IN BIAS RESISTORS) 1 1 2 2 SOT-523 FEATURES SOT-323 * Built-in bias resistors that implies easy ON/OFF applications. 3 * The bias resistors are thin-film resistors with complete isolation to allow negative input. 1 EQUIVALENT CIRCUIT 2 SOT-23 1 TO-92 ORDERING IN
9.26. Size:145K jiangsu
dtd113zua.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTD113ZUA DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of
9.27. Size:142K cystek
dtd114ea3.pdf
Spec. No. C377A3 Issued Date 2003.10.07 CYStech Electronics Corp. Revised Date 2004.03.03 Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EA3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
9.28. Size:150K cystek
dtd114en3.pdf
Spec. No. C377N3 Issued Date 2004.01.15 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet
9.29. Size:151K cystek
dtd113zn3.pdf
Spec. No. C379N3 Issued Date 2003.10.05 CYStech Electronics Corp. Revised Date 2004.02.26 Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTD113ZN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w
9.30. Size:350K lrc
ldtd113eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD113EET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
9.31. Size:357K lrc
ldtd113zet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD113ZET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
9.32. Size:345K lrc
ldtd114eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD114EET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
9.33. Size:314K lrc
ldtd114gkt1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD114GKT1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
9.34. Size:982K kexin
dtd114e.pdf
SMD Type Transistors Digital Transistors DTD114E (KDTD114E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 1 2 The bias resistors consist of thin-film resistors with complete +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.
9.35. Size:1000K kexin
dtd113z.pdf
SMD Type Transistors Digital Transistors DTD113Z (KDTD113Z) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 1 2 The bias resistors consist of thin-film resistors with complete +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 isola
9.36. Size:172K chenmko
chdtd113zugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD113ZUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
9.37. Size:58K chenmko
chdtd114gkgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD114GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
9.38. Size:113K chenmko
chdtd113ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD113EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
9.39. Size:99K chenmko
chdtd114ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
9.40. Size:139K chenmko
chdtd113zkgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD113ZKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
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