All Transistors. DTD118 Datasheet

 

DTD118 Datasheet and Replacement


   Type Designator: DTD118
   SMD Transistor Code: F62
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT23
 

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DTD118 Datasheet (PDF)

 ..1. Size:70K  first silicon
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DTD118

SEMICONDUCTORDTD118TECHNICAL DATADigital transistors (built-in resistors) Features1) Built-in bias resistors enable the configuration of an inverterOUTcircuit without connecting external input resistors (see theequivalent circuit).GND2) The bias resistors consist of thin-film resistors with completeisolation to allow negative biasing of the input. They also have INthe

 9.1. Size:49K  motorola
pdtd114et 4.pdf pdf_icon

DTD118

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

 9.2. Size:49K  philips
pdtd114et 4.pdf pdf_icon

DTD118

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

 9.3. Size:64K  philips
pdtd113zt.pdf pdf_icon

DTD118

PDTD113ZTNPN 500 mA, 50 V resistor-equipped transistor;R1 = 1 k, R2 = 10 kRev. 02 23 March 2009 Product data sheet1. Product profile1.1 General descriptionNPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-MountedDevice (SMD) plastic package.PNP complement: PDTB113ZT.1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des

Datasheet: DTC709 , DTC710 , DTC711 , DTC714 , DTC717 , DTC722 , DTD101 , DTD102 , TIP42C , DTD123 , DTD124 , DWA402 , DWA403 , DWA404 , DWA407 , DWA411 , DWA410 .

History: 2SC1355F | MP4965 | 2SD2121LB | CSC1398R | BLV45A | BDW83A | FSB560

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