DTD118 PDF and Equivalents Search

 

DTD118 Specs and Replacement

Type Designator: DTD118

SMD Transistor Code: F62

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: SOT23

 DTD118 Substitution

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DTD118 datasheet

 ..1. Size:70K  first silicon

dtd118.pdf pdf_icon

DTD118

SEMICONDUCTOR DTD118 TECHNICAL DATA Digital transistors (built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter OUT circuit without connecting external input resistors (see the equivalent circuit). GND 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have IN the... See More ⇒

 9.1. Size:49K  motorola

pdtd114et 4.pdf pdf_icon

DTD118

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo... See More ⇒

 9.2. Size:49K  philips

pdtd114et 4.pdf pdf_icon

DTD118

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo... See More ⇒

 9.3. Size:64K  philips

pdtd113zt.pdf pdf_icon

DTD118

PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 k , R2 = 10 k Rev. 02 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package. PNP complement PDTB113ZT. 1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des... See More ⇒

Detailed specifications: DTC709, DTC710, DTC711, DTC714, DTC717, DTC722, DTD101, DTD102, TIP42C, DTD123, DTD124, DWA402, DWA403, DWA404, DWA407, DWA411, DWA410

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