MJE13003T Todos los transistores

 

MJE13003T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003T

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 8

Encapsulados: TO126

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MJE13003T datasheet

 ..1. Size:169K  first silicon
mje13003t.pdf pdf_icon

MJE13003T

SEMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage VCBO=700V. B A 8.3 MAX B 11.3 0.3 C 4.15 TYP 1 2 3 D 3.2 0.2 E 2.0 0.2 H F 2.8 0.1 I G 3.2 0.1 MAXIMUM RA

 6.1. Size:107K  onsemi
mje13003.pdf pdf_icon

MJE13003T

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat

 6.2. Size:107K  onsemi
mje13003g.pdf pdf_icon

MJE13003T

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat

 6.3. Size:308K  utc
mje13003k.pdf pdf_icon

MJE13003T

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100 C * Inductive switching ma

Otros transistores... FTD880 , FTD882 , FTD882D , FTD882F , MJD122I , MJE13002B , MJE13003A , MJE13003I , 2SA1015 , MJE13005T , MMBTA42F , MMBTA92F , MMBTH10Q , A966O , A966Y , DDA124EK , DDA144EK .

 

 

 


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