MJE13003T - описание и поиск аналогов

 

MJE13003T. Аналоги и основные параметры

Наименование производителя: MJE13003T

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 1.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 5 MHz

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: TO126

 Аналоги (замена) для MJE13003T

- подборⓘ биполярного транзистора по параметрам

 

MJE13003T даташит

 ..1. Size:169K  first silicon
mje13003t.pdfpdf_icon

MJE13003T

SEMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage VCBO=700V. B A 8.3 MAX B 11.3 0.3 C 4.15 TYP 1 2 3 D 3.2 0.2 E 2.0 0.2 H F 2.8 0.1 I G 3.2 0.1 MAXIMUM RA

 6.1. Size:107K  onsemi
mje13003.pdfpdf_icon

MJE13003T

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat

 6.2. Size:107K  onsemi
mje13003g.pdfpdf_icon

MJE13003T

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat

 6.3. Size:308K  utc
mje13003k.pdfpdf_icon

MJE13003T

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100 C * Inductive switching ma

Другие транзисторы: FTD880, FTD882, FTD882D, FTD882F, MJD122I, MJE13002B, MJE13003A, MJE13003I, 2SA1015, MJE13005T, MMBTA42F, MMBTA92F, MMBTH10Q, A966O, A966Y, DDA124EK, DDA144EK

 

 

 

 

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