MJE13003T PDF and Equivalents Search

 

MJE13003T Specs and Replacement

Type Designator: MJE13003T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO126

 MJE13003T Substitution

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MJE13003T datasheet

 ..1. Size:169K  first silicon

mje13003t.pdf pdf_icon

MJE13003T

SEMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage VCBO=700V. B A 8.3 MAX B 11.3 0.3 C 4.15 TYP 1 2 3 D 3.2 0.2 E 2.0 0.2 H F 2.8 0.1 I G 3.2 0.1 MAXIMUM RA... See More ⇒

 6.1. Size:107K  onsemi

mje13003.pdf pdf_icon

MJE13003T

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat... See More ⇒

 6.2. Size:107K  onsemi

mje13003g.pdf pdf_icon

MJE13003T

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat... See More ⇒

 6.3. Size:308K  utc

mje13003k.pdf pdf_icon

MJE13003T

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100 C * Inductive switching ma... See More ⇒

Detailed specifications: FTD880, FTD882, FTD882D, FTD882F, MJD122I, MJE13002B, MJE13003A, MJE13003I, 2SA1015, MJE13005T, MMBTA42F, MMBTA92F, MMBTH10Q, A966O, A966Y, DDA124EK, DDA144EK

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