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Número de Parte: 13007T

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 5 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO220

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13007T Datasheet (PDF)

1.1. 13007t.pdf Size:113K _jdsemi

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R 13007T 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEA

5.1. br3dd13007hv7r.pdf Size:506K _update

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MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

5.2. mje13007v7.pdf Size:238K _update

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MJE13007V7(3DD13007V7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A

 5.3. br3dd13007x9p.pdf Size:447K _update

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MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic lighting, switching power supply applications.

5.4. sbp13007d.pdf Size:315K _update

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SBP13007D SBP13007D SBP13007D SBP13007D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ Minimum Lot-to-Lot h Variation FE ◆ Wide Reverse Bias SOA ◆ Built-in fr

 5.5. mje13007x8.pdf Size:441K _update

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MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

5.6. br3dd13007v9p.pdf Size:456K _update

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MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equivalent Circuit 引脚排列

5.7. br3dd13007x8f.pdf Size:441K _update

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MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

5.8. br3dd13007v8f.pdf Size:439K _update

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MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等

5.9. sbp13007o.pdf Size:335K _update

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SBP13007-O SBP13007-O SBP13007-O SBP13007-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B B B B C C C C

5.10. mje13007x9.pdf Size:447K _update

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MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic lighting, switching power supply applications.

5.11. mje13007dv7.pdf Size:240K _update

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MJE13007DV7 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

5.12. mje13007x7.pdf Size:455K _update

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MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic lightin

5.13. sbf13007-o.pdf Size:329K _update

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SBF13007-O SBF13007-O SBF13007-O SBF13007-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA ◆ Isolation Voltage

5.14. mje13007hv7.pdf Size:506K _update

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MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic light

5.15. mje13007g.pdf Size:408K _update

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UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications.  FEATURES * VCEO(SUS) 400V * 7

5.16. st13007dfp.pdf Size:160K _update

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ST13007DFP ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARA

5.17. sbp13007s.pdf Size:377K _update

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SBP13007-S SBP13007-S SBP13007-S SBP13007-S High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description G

5.18. br3dd13007x7r.pdf Size:455K _update

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MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 用于高频电子照明电路、开关及开关电源。 High frequency electronic lightin

5.19. mje13007v8.pdf Size:439K _update

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MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等

5.20. sbp13007x.pdf Size:290K _update

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SBP13007-X High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B B B B C C C C General Description General Descr

5.21. mje13007v9.pdf Size:456K _update

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MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equivalent Circuit 引脚排列

5.22. sbp13007k.pdf Size:435K _update

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SBP13007-K SBP13007-K SBP13007-K SBP13007-K High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B B B B C C C C

5.23. ksh13007.pdf Size:229K _upd

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KSH13007 KSH13007 ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007 KSH13007 Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 80 Watts TO-220 CH

5.24. ksh13007a.pdf Size:229K _upd

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KSH13007A KSH13007A ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007A KSH13007A Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 80 Watts TO-220

5.25. wbp13007-k.pdf Size:369K _upd

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WBP13007-K High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA B B B B C C C C General Description E E E E TO220 TO220 TO220 TO220 This

5.26. ksh13007f.pdf Size:226K _upd

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KSH13007F KSH13007F ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007F KSH13007F Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 80 Watts TO-220

5.27. ksh13007af.pdf Size:226K _upd

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KSH13007AF KSH13007AF ◎ SEMIHOW REV.A1,Oct 2007 KSH130 007AF KSH13007AF Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 80 Watts TO

5.28. mje13007.pdf Size:337K _motorola

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Order this document MOTOROLA by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE? NPN Bipolar Power Transistor POWER TRANSISTOR For Switching Power Supply Applications 8.0 AMPERES 400 VOLTS The MJE/MJF13007 is designed for highvoltage, highspeed power switching 80/40 WATTS inductive circuits where fall time is critical. It is particularly

5.29. phe13007.pdf Size:58K _philips2

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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP

5.30. stb13007dt4.pdf Size:235K _st

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STB13007DT4 High voltage fast-switching NPN power transistor General features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode 3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operation D2PAK Very high switching speed

5.31. st13007-.pdf Size:68K _st

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ST13007FP ? HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C LARGE RBSOA 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220FP SWITCH MODE POWER SUPPLIES DESCRIPTION The d

5.32. st13007.pdf Size:253K _st

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ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting TO-220 Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured using high volt

5.33. mje13007.pdf Size:29K _st

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MJE13007 ? SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 2 The MJE13007 is a silicon multiepitaxial mesa 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 It is are inteded for use in motor control, switching regulators etc. INTERNAL

5.34. mje13007a.pdf Size:63K _st

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MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 The MJE13007A is silicon multiepitaxial mesa 2 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 They are inteded for use in motor control, switching regulators etc. INTERNAL

5.35. st13007d.pdf Size:213K _st

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ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARACTERIZ

5.36. fjpf13007.pdf Size:59K _fairchild_semi

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FJPF13007 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Bas

5.37. fjp13007.pdf Size:540K _fairchild_semi

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July 2008 FJP13007 High Voltage Fast-Switching NPN Power Transistor High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 70

5.38. kse13006,13007.pdf Size:48K _fairchild_semi

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KSE13006/13007 High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : KSE13006 600 V : KSE13007 700 V VCEO Collector-Emitter Voltage : KSE13006 300 V

5.39. kse13007f.pdf Size:23K _samsung

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KSE13007F NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATIONS TO-220F High Speed Switching Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 16 A Ba

5.40. mje13007-d.pdf Size:194K _onsemi

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MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high-voltage, high-speed power http://onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTOR driver

5.41. mje13007d.pdf Size:368K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 700V

5.42. mje13007-m.pdf Size:351K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V *

5.43. mje13007.pdf Size:380K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS ? DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. ? FEATURES * VCEO(SUS) 400V * 700V Blo

5.44. std13007.pdf Size:293K _auk

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STD13007 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High speed switching C • High Collector Voltage : VCBO = 700V • Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13007 STD13007 TO-220AB Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating U

5.45. std13007p.pdf Size:264K _auk

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STD13007P NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High speed switching C • High Collector Voltage : VCBO = 700V • Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13007P STD13007 TO-220AB Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating

5.46. std13007fc.pdf Size:265K _auk

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STD13007FC NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High speed switching • High Collector Voltage : VCBO = 700V C • Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E STD13007FC STD13007 TO-220F-3SL E Absolute maximum ratings (Tc=25?) Characteristic Symbol R

5.47. std13007f.pdf Size:265K _auk

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STD13007F NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection • High speed switching C • High Collector Voltage : VCBO = 700V • Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13007F STD13007 TO-220F-3L Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rati

5.48. ts13007b a07.pdf Size:176K _taiwansemi

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TS13007B High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram ? High Voltage ? High Speed Switching Structure ? Silicon Triple Diffused Type ? NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007BCZ C0 TO-2

5.49. ts13007b.pdf Size:177K _taiwansemi

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TS13007B High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

5.50. cdl13007.pdf Size:85K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current Contin

5.51. cje13007.pdf Size:84K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CJE13007 TO-220 Plastic Package Used in Energy Saving Lights and Power Switching Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current Con

5.52. cdl13007ddl.pdf Size:218K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007D TO-220 Plastic Package Built in Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 9 V IC Collector Current Continuous 7 A Collector Power Dissipa

5.53. mje13007f.pdf Size:351K _kec

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SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ·Excellent Switching Times : ton=1.6μ S(Max.), at IC=5A S(Max.), tf=0.7μ ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Vo

5.54. mje13007.pdf Size:339K _kec

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SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ·Excellent Switching Times : ton=1.6μ S(Max.), at IC=5A S(Max.), tf=0.7μ ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Vol

5.55. mjf13007.pdf Size:146K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

5.56. je13007.pdf Size:149K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

5.57. 3dd13007.pdf Size:274K _lge

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3DD13007(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8 A P

5.58. hmje13007.pdf Size:50K _hsmc

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Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-220 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =2

5.59. hmje13007a.pdf Size:50K _hsmc

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Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-220 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =

5.60. mje13007.pdf Size:234K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007 NPN MJE /MJE SERIES TRANSISTORS MJE13007 NPN MJE 系列

5.61. mje13007m.pdf Size:221K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE 系列

5.62. mje13007a.pdf Size:256K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE 系列

5.63. st13007.pdf Size:380K _semtech

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ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 8 A O Total Power Dissipation (Ta = 25 C) Ptot 2 W O Total Power Dissipation (

5.64. ksh13007w.pdf Size:146K _shantou-huashan

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N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13007W █ HIGH VOLTAGE SWITCH MODE APPLICATION █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-263(D2PAK) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)

5.65. 3dd13007 x1.pdf Size:153K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 X1 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 X1 是硅NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot W (TC=25℃) 80 结构和

5.66. 3dd13007 h8d.pdf Size:155K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 H8D 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 H8D 是硅 符 号 额定值 单 位 ● 反向漏电流小 NPN 型功率开关晶体管,该 VCEO 400 V ● 高温特性好 IC 9 A 产品采用平面工艺, 分压环 ● 合适的开关速度 Ptot W (TC=25℃) 90 终端结构和

5.67. 3dd13007 z7.pdf Size:151K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 Z7 产品概述 特征参数 产品特点 3DD13007 Z7 是硅 NPN ● 开关损耗低 符 号 额定值 单 位 ● 反向漏电流小 VCEO 200 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (TC=25℃) 50 W 结构和少

5.68. 3dd13007 y8.pdf Size:153K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 Y8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 Y8 是硅NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 340 V 该产品 ● 高温特性好 IC 7 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot W (TC=25℃) 80 结构和

5.69. 3dd13007 b8.pdf Size:155K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 B8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 B8 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot W (TC=25℃) 80 结构和

5.70. 3dd13007 b8d.pdf Size:154K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 B8D 产品概述 特征参数 产品特点 3DD13007 B8D 是硅 ● 开关损耗低 符 号 额定值 单 位 ● 反向漏电流小 NPN 型功率开关晶体管,该 VCEO 400 V ● 高温特性好 IC 7 A 产品采用平面工艺, 分压环 ● 合适的开关速度 Ptot (TC=25℃) 80 W 终端结构和少

5.71. 3dd13007 z8.pdf Size:154K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 Z8 产品概述 特征参数 产品特点 3DD13007 Z8 是硅 NPN ● 开关损耗低 符 号 额定值 单 位 ● 反向漏电流小 VCEO 200 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (TC=25℃) 75 W 结构和少

5.72. 3dd13007y8.pdf Size:153K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 Y8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 Y8 是硅NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 340 V 该产品 ● 高温特性好 IC 7 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot W (TC=25℃) 80 结构和

5.73. 3dd13007b8.pdf Size:154K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 B8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 B8 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot W (TC=25℃) 80 结构和

5.74. 3dd13007z8.pdf Size:155K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 Z8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 Z8 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 VCEO 200 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (TC=25℃) 75 W 结构

5.75. 3dd13007.pdf Size:512K _china

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SMD r DIP Ty Trans stor SMD Type Transistor SMD Type TransistoC SMDTyppee Tra n s iis tIors Type Product specification 3DD13007 ■ Features TO-263 Unit: mm ● High Speed Switching +0.2 4.57-0.2 +0.1 1.27-0.1 ● Suitable for Switching Regulator and Motor Control +0.1 0.1max 1.27-0.1 1 3 2 +0.1 0.81-0.1 2.54 1. BASE +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2. COLLE

5.76. 3dd13007z7.pdf Size:147K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 Z7 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 Z7 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 VCEO 200 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (TC=25℃) 50 W 结构

5.77. 3dd13007x1.pdf Size:152K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 X1 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 X1 是硅NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 8 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot W (TC=25℃) 80 结构和

5.78. 3dd13007h8d.pdf Size:155K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13007 H8D 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13007 H8D 是硅 符 号 额定值 单 位 ● 反向漏电流小 NPN 型功率开关晶体管,该 VCEO 400 V ● 高温特性好 IC 9 A 产品采用平面工艺, 分压环 ● 合适的开关速度 Ptot W (TC=25℃) 90 终端结构和

5.79. 13007s.pdf Size:121K _jdsemi

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R 13007S 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Computer Switch Power Supply and All kinds of power switch circuit 2. 2. 2.FEATUR

5.80. 13007dl.pdf Size:115K _jdsemi

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R 13007DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2.

5.81. 13007.pdf Size:114K _jdsemi

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R 13007 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEAT

5.82. mje13007f.pdf Size:286K _first_silicon

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SEMICONDUCTOR MJE13007F TECHNICAL DATA C MJE13007F A TRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625±0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + L M FEATURES _ H 0 45 0 1

Otros transistores... 13005DL , 13005ED , 13005F , 13005S , 13005SD , 13005SDL , 13007DL , 13007S , MJE13005 , 13009A , 13009SDL , 13009T , 3866S , 3866SF , B647 , B772P , B772PC .

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