13007T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 13007T 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220
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13007T datasheet
13007t.pdf
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sbp13007d.pdf
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sbp13007k.pdf
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wbp13007-k.pdf
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sbp13007x.pdf
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fhp13007a.pdf
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j13007-1a.pdf
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mje13007v7.pdf
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mje13007dv7.pdf
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KSH13007AF KSH13007AF SEMIHOW REV.A1,Oct 2007 KSH130 007AF KSH13007AF Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 80 Watts TO
ksh13007f.pdf
KSH13007F KSH13007F SEMIHOW REV.A1,Oct 2007 KSH130 007F KSH13007F Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 80 Watts TO-220
ksh13007a.pdf
KSH13007A KSH13007A SEMIHOW REV.A1,Oct 2007 KSH130 007A KSH13007A Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 80 Watts TO-220
3dd13007x1.pdf
NPN R 3DD13007 X1 3DD13007 NPN VCEO 400 V IC 8 A Ptot TC=25
phe13007.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converte
mje13007a.pdf
isc Silicon NPN Power Transistor MJE13007A DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
je13007.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13007 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector
mjf13007.pdf
isc Silicon NPN Power Transistor MJF13007 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are pa
Otros transistores... 13005DL, 13005ED, 13005F, 13005S, 13005SD, 13005SDL, 13007DL, 13007S, 2N4401, 13009A, 13009SDL, 13009T, 3866S, 3866SF, B647, B772P, B772PC
Parámetros del transistor bipolar y su interrelación.
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