13007T datasheet, аналоги, параметры транзистора

..1. Size:113K jdsemi
13007t.pdf pdf_icon

R 13007T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FEA

0.1. Size:246K onsemi
fjp13007tu fjp13007h1tu fjp13007h1tu-f080 fjp13007h2tu fjp13007h2tu-f080.pdf pdf_icon

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

9.1. Size:376K 1
3dd13007k.pdf pdf_icon

9.2. Size:222K 1
xw6821 xw6822 xw6822a xw6823 xw6823a xw13001 sxw13001 xw13002 sxw13002 xw13003 sxw13003 sxw13005 sxw13007 sxw13009.pdf pdf_icon

9.3. Size:337K motorola
mje13007.pdf pdf_icon

Order this document MOTOROLA by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor POWER TRANSISTOR For Switching Power Supply Applications 8.0 AMPERES 400 VOLTS The MJE/MJF13007 is designed for high voltage, high speed power switching 80/40 WATTS inductive circuits where fall time is critical. It is part

9.4. Size:58K philips
phe13007.pdf pdf_icon

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS

9.5. Size:63K st
mje13007a.pdf pdf_icon

MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 The MJE13007A is silicon multiepitaxial mesa 2 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 They are inteded for use in motor control, switching regulators etc. INTER

9.6. Size:214K st
st13007d.pdf pdf_icon

ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARACT

9.7. Size:228K st
stb13007dt4.pdf pdf_icon

STB13007DT4 High voltage fast-switching NPN power transistor General features Improved specification Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode 3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operation D2PAK Very high

9.8. Size:29K st
mje13007.pdf pdf_icon

MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 2 The MJE13007 is a silicon multiepitaxial mesa 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 It is are inteded for use in motor control, switching regulators etc. INTE

9.9. Size:160K st
st13007dfp.pdf pdf_icon

ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARA

9.10. Size:68K st
st13007-.pdf pdf_icon

ST13007FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C LARGE RBSOA 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220FP SWITCH MODE POWER SUPPLIES DESCRIPTION

9.11. Size:252K st
st13007.pdf pdf_icon

ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting TO-220 Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured

9.12. Size:48K fairchild semi
kse13006,13007.pdf pdf_icon

KSE13006/13007 High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage KSE13006 600 V KSE13007 700 V VCEO Collector-Emitter Voltage KSE13006

9.13. Size:540K fairchild semi
fjp13007.pdf pdf_icon

July 2008 FJP13007 High Voltage Fast-Switching NPN Power Transistor High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base

9.14. Size:59K fairchild semi
fjpf13007.pdf pdf_icon

FJPF13007 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO E

9.15. Size:23K samsung
kse13007f.pdf pdf_icon

KSE13007F NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATIONS TO-220F High Speed Switching Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 16

9.16. Size:275K onsemi
mje13007.pdf pdf_icon

MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high-voltage, high-speed power www.onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch-mode applications such as Switching POWER TRANSISTOR Regulators, Inverters, Motor Controls, Solenoid/Relay drivers

9.17. Size:215K onsemi
fjpf13007.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.18. Size:194K onsemi
mje13007-d.pdf pdf_icon

MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high-voltage, high-speed power http //onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTOR dri

9.19. Size:408K utc
mje13007g.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

9.20. Size:380K utc
mje13007.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

9.21. Size:368K utc
mje13007d.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 70

9.22. Size:351K utc
mje13007-m.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V

9.23. Size:265K auk
std13007f.pdf pdf_icon

STD13007F NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage VCBO = 700V Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13007F STD13007 TO-220F-3L Absolute maximum ratings (Ta=25 C) Characteristic Symbol R

9.24. Size:264K auk
std13007p.pdf pdf_icon

STD13007P NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage VCBO = 700V Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13007P STD13007 TO-220AB Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rat

9.25. Size:293K auk
std13007.pdf pdf_icon

STD13007 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage VCBO = 700V Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13007 STD13007 TO-220AB Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ratin

9.26. Size:265K auk
std13007fc.pdf pdf_icon

STD13007FC NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching High Collector Voltage VCBO = 700V C Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E STD13007FC STD13007 TO-220F-3SL E Absolute maximum ratings (Tc=25 ) Characteristic Sym

9.27. Size:176K taiwansemi
ts13007b a07.pdf pdf_icon

TS13007B High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

9.28. Size:177K taiwansemi
ts13007b.pdf pdf_icon

TS13007B High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

9.29. Size:85K cdil
cdl13007.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current Con

9.30. Size:218K cdil
cdl13007ddl.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007D TO-220 Plastic Package Built in Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 9 V IC Collector Current Continuous 7 A Collector Power Diss

9.31. Size:84K cdil
cje13007.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CJE13007 TO-220 Plastic Package Used in Energy Saving Lights and Power Switching Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current

9.32. Size:767K jiangsu
3dd13007n36f.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistor 3DD13007N36F TRANSISTOR (NPN) TO-220F FEATURES Power switching applications 1. BASE 1 2 3 2. COLLECTOR 3. EMITTER 13007N=Device code Equivalent Circuit Solid dot=Green moldinn compound device, if none,the normal device 13007N 36F=Code 36F MAXIMUM RATINGS (Ta=25 unl

9.33. Size:339K kec
mje13007.pdf pdf_icon

SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.6 S(Max.), at IC=5A S(Max.), tf=0.7 High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Vol

9.34. Size:351K kec
mje13007f.pdf pdf_icon

SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.6 S(Max.), at IC=5A S(Max.), tf=0.7 High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Vo

9.35. Size:274K lge
3dd13007.pdf pdf_icon

3DD13007(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8

9.36. Size:50K hsmc
hmje13007a.pdf pdf_icon

Spec. No. HE200501 HI-SINCERITY Issued Date 2005.06.01 Revised Date 2007.03.06 MICROELECTRONICS CORP. Page No. 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

9.37. Size:50K hsmc
hmje13007.pdf pdf_icon

Spec. No. HE200207 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2007.03.06 MICROELECTRONICS CORP. Page No. 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

9.38. Size:256K sisemi
mje13007a.pdf pdf_icon

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE

9.39. Size:234K sisemi
mje13007.pdf pdf_icon

9.40. Size:221K sisemi
mje13007m.pdf pdf_icon

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE

9.41. Size:548K jilin sino
3dd13007k.pdf pdf_icon

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007K MAIN CHARACTERISTICS Package I 8A C V 400V CEO P (TO-220C) 80W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

9.42. Size:776K jilin sino
3dd13007md.pdf pdf_icon

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007MD MAIN CHARACTERISTICS Package I 8A C V 400V CEO P (TO-220HF/220MF-K1) 45W C P (TO-220C/262/263) 80W C TO-220C TO-220C-S1 APPLICATIONS Energy-saving light Electronic ballasts High frequency swit

9.43. Size:447K blue-rocket-elect
br3dd13007x9p.pdf pdf_icon

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

9.44. Size:441K blue-rocket-elect
mje13007x8.pdf pdf_icon

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

9.45. Size:439K blue-rocket-elect
br3dd13007v8f.pdf pdf_icon

9.46. Size:447K blue-rocket-elect
mje13007x9.pdf pdf_icon

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

9.47. Size:439K blue-rocket-elect
mje13007v8.pdf pdf_icon

9.48. Size:455K blue-rocket-elect
mje13007x7.pdf pdf_icon

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

9.49. Size:456K blue-rocket-elect
br3dd13007v9p.pdf pdf_icon

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

9.50. Size:506K blue-rocket-elect
br3dd13007hv7r.pdf pdf_icon

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

9.51. Size:456K blue-rocket-elect
mje13007v9.pdf pdf_icon

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

9.52. Size:455K blue-rocket-elect
br3dd13007x7r.pdf pdf_icon

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

9.53. Size:506K blue-rocket-elect
mje13007hv7.pdf pdf_icon

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

9.54. Size:441K blue-rocket-elect
br3dd13007x8f.pdf pdf_icon

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

9.55. Size:380K semtech
st13007.pdf pdf_icon

ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 8 A O Total Power Dissipation (Ta = 25 C) Ptot 2 W O Total Power Dissipation (

9.56. Size:146K shantou-huashan
ksh13007w.pdf pdf_icon

9.57. Size:154K crhj
3dd13007 z8.pdf pdf_icon

NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

9.58. Size:153K crhj
3dd13007y8.pdf pdf_icon

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

9.59. Size:155K crhj
3dd13007 b8.pdf pdf_icon

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

9.60. Size:154K crhj
3dd13007b8.pdf pdf_icon

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

9.61. Size:151K crhj
3dd13007 z7.pdf pdf_icon

NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

9.62. Size:155K crhj
3dd13007h8d.pdf pdf_icon

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

9.63. Size:152K crhj
3dd13007x1.pdf pdf_icon

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

9.64. Size:153K crhj
3dd13007 x1.pdf pdf_icon

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

9.65. Size:147K crhj
3dd13007z7.pdf pdf_icon

9.66. Size:155K crhj
3dd13007 h8d.pdf pdf_icon

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

9.67. Size:155K crhj
3dd13007z8.pdf pdf_icon

9.68. Size:154K crhj
3dd13007 b8d.pdf pdf_icon

NPN R 3DD13007 B8D 3DD13007 B8D NPN VCEO 400 V IC 7 A Ptot TC=25 80 W

9.69. Size:153K crhj
3dd13007 y8.pdf pdf_icon

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

9.70. Size:114K jdsemi
13007.pdf pdf_icon

R 13007 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FEAT

9.71. Size:115K jdsemi
13007dl.pdf pdf_icon

R 13007DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Mainly used for 110V power Fluorescent Lamp Electronic Ballast etc 2 2 2

9.72. Size:121K jdsemi
13007s.pdf pdf_icon

R 13007S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer Switch Power Supply and All kinds of power switch circuit 2 2 2 FEATUR

9.73. Size:512K tysemi
3dd13007.pdf pdf_icon

SMD r DIP Ty Trans stor SMD Type Transistor SMD Type TransistoC SMDTyppee Tra n s iis tIors Type Product specification 3DD13007 Features TO-263 Unit mm High Speed Switching +0.2 4.57-0.2 +0.1 1.27-0.1 Suitable for Switching Regulator and Motor Control +0.1 0.1max 1.27-0.1 1 3 2 +0.1 0.81-0.1 2.54 1. BASE +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2. COLLE

9.74. Size:286K first silicon
mje13007f.pdf pdf_icon

SEMICONDUCTOR MJE13007F TECHNICAL DATA C MJE13007F A TRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625 0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + L M FEATURES _ H 0 45 0 1

9.75. Size:377K winsemi
sbp13007s.pdf pdf_icon

SBP13007-S SBP13007-S SBP13007-S SBP13007-S High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G

9.76. Size:315K winsemi
sbp13007d.pdf pdf_icon

SBP13007D SBP13007D SBP13007D SBP13007D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed Minimum Lot-to-Lot h Variation FE Wide Reverse Bias SOA Built-in fr

9.77. Size:435K winsemi
sbp13007k.pdf pdf_icon

SBP13007-K SBP13007-K SBP13007-K SBP13007-K High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C

9.78. Size:329K winsemi
sbf13007-o.pdf pdf_icon

SBF13007-O SBF13007-O SBF13007-O SBF13007-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Isolation Voltage

9.79. Size:369K winsemi
wbp13007-k.pdf pdf_icon

WBP13007-K High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C General Description E E E E TO220 TO220 TO220 TO220 This

9.80. Size:335K winsemi
sbp13007o.pdf pdf_icon

SBP13007-O SBP13007-O SBP13007-O SBP13007-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C

9.81. Size:290K winsemi
sbp13007x.pdf pdf_icon

SBP13007-X High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C General Description General Descr

9.82. Size:429K feihonltd
fhp13007a.pdf pdf_icon

TRANSISTOR FHP13007A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballas

9.83. Size:667K feihonltd
j13007-1a.pdf pdf_icon

TRANSISTOR J13007-1A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballas

9.84. Size:238K foshan
mje13007v7.pdf pdf_icon

MJE13007V7(3DD13007V7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A

9.85. Size:240K foshan
mje13007dv7.pdf pdf_icon

MJE13007DV7 NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

9.86. Size:229K semihow
ksh13007.pdf pdf_icon

KSH13007 KSH13007 SEMIHOW REV.A1,Oct 2007 KSH130 007 KSH13007 Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 80 Watts TO-220 CH

9.87. Size:226K semihow
ksh13007af.pdf pdf_icon

KSH13007AF KSH13007AF SEMIHOW REV.A1,Oct 2007 KSH130 007AF KSH13007AF Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 80 Watts TO

9.88. Size:226K semihow
ksh13007f.pdf pdf_icon

KSH13007F KSH13007F SEMIHOW REV.A1,Oct 2007 KSH130 007F KSH13007F Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 80 Watts TO-220

9.89. Size:229K semihow
ksh13007a.pdf pdf_icon

KSH13007A KSH13007A SEMIHOW REV.A1,Oct 2007 KSH130 007A KSH13007A Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 80 Watts TO-220

9.90. Size:159K wuxi china
3dd13007x1.pdf pdf_icon

NPN R 3DD13007 X1 3DD13007 NPN VCEO 400 V IC 8 A Ptot TC=25

9.91. Size:337K cn ween semi
phe13007.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converte

9.92. Size:254K inchange semiconductor
mje13007a.pdf pdf_icon

isc Silicon NPN Power Transistor MJE13007A DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

9.93. Size:149K inchange semiconductor
je13007.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13007 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector

9.94. Size:215K inchange semiconductor
mjf13007.pdf pdf_icon

isc Silicon NPN Power Transistor MJF13007 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are pa

13007T datasheet и подбор замены

13007T datasheet, аналоги, основные параметры

Предельные значения

Электрические характеристики

13007T даташит

Список транзисторов

Обновления

Popular searches

AllTransistors(C)