B647 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: B647 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO92
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B647 datasheet
..1. Size:110K jdsemi
b647.pdf 
R B647 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 FEATURES 2
0.1. Size:284K mcc
2sb647l-c.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian
0.2. Size:719K mcc
2sb647-b.pdf
2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A
0.3. Size:284K mcc
2sb647l-b.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian
0.4. Size:719K mcc
2sb647-d.pdf
2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A
0.5. Size:284K mcc
2sb647l-d.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian
0.6. Size:719K mcc
2sb647-c.pdf
2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A
0.7. Size:167K utc
2sb647.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB647L-x-T9N-B 2SB647G-x-T9N-B TO-92NL E C B Tape Box 2SB647L-x-T9N-K 2SB647G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4
0.8. Size:33K hitachi
2sb647.pdf
2SB647, 2SB647A Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base volt
0.9. Size:495K jiangsu
2sb647.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 2SB647 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Low Frequency Power Amplifier 3. BASE Complementary Pair with 2SD667 Equivalent Circuit B647=Device code B647 Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING
0.10. Size:5305K jiangsu
2sb647 2sb647a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va
0.11. Size:186K wietron
2sb647 a.pdf
2SB647 / 2SB647A PNP General Purpose Transistors 2 P b Lead(Pb)-Free 1 3 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1 TO-92MOD MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage 80 VCEO V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1000 mA Total Device Dissipation PD 900 mW TA=25 C Tj C Junc
0.12. Size:897K blue-rocket-elect
2sb647 2sb647a.pdf
2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A) Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
0.13. Size:568K feihonltd
b647a.pdf
MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform
0.14. Size:244K lzg
2sb647a-b.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR , 2SD667(3DG667)/2SD667A(3DG667A) Purpose Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO -120 V 2SB647 -80
0.15. Size:244K lzg
2sb647a-c.pdf
2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR , 2SD667(3DG667)/2SD667A(3DG667A) Purpose Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO -120 V 2SB647 -80
0.16. Size:152K haolin elec
2sb647.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation 1. BASE PCM 0.9 W (Tamb=25 ) 2. COLLECTOR 1 Collector current 2 ICM -1 A 3. EMITTER 3 Collector-base voltage V(BR)CBO 120 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE
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