All Transistors. B647 Datasheet

 

B647 Datasheet, Equivalent, Cross Reference Search


   Type Designator: B647
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 B647 Transistor Equivalent Substitute - Cross-Reference Search

   

B647 Datasheet (PDF)

 ..1. Size:110K  jdsemi
b647.pdf

B647
B647

RB647 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

 0.1. Size:284K  mcc
2sb647l-c.pdf

B647
B647

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian

 0.2. Size:719K  mcc
2sb647-b.pdf

B647
B647

2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A

 0.3. Size:284K  mcc
2sb647l-b.pdf

B647
B647

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian

 0.4. Size:719K  mcc
2sb647-d.pdf

B647
B647

2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A

 0.5. Size:284K  mcc
2sb647l-d.pdf

B647
B647

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian

 0.6. Size:719K  mcc
2sb647-c.pdf

B647
B647

2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A

 0.7. Size:167K  utc
2sb647.pdf

B647
B647

UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB647L-x-T9N-B 2SB647G-x-T9N-B TO-92NL E C B Tape Box 2SB647L-x-T9N-K 2SB647G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4

 0.8. Size:33K  hitachi
2sb647.pdf

B647
B647

2SB647, 2SB647ASilicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD667/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SB647, 2SB647AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SB647 2SB647A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base volt

 0.9. Size:495K  jiangsu
2sb647.pdf

B647
B647

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO 92L 2SB647 TRANSISTOR (PNP)1. EMITTER2. COLLECTORFEATURES Low Frequency Power Amplifier3. BASE Complementary Pair with 2SD667 Equivalent Circuit B647=Device code B647Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING

 0.10. Size:5305K  jiangsu
2sb647 2sb647a.pdf

B647
B647

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va

 0.11. Size:186K  wietron
2sb647 a.pdf

B647
B647

2SB647 / 2SB647APNP General Purpose Transistors2P b Lead(Pb)-Free13231.EMITTER3.BASE2.COLLECTOR1TO-92MODMAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage80VCEOVVCBOCollector-Base Voltage 120 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 1000 mATotal Device DissipationPD900 mWTA=25CTj CJunc

 0.12. Size:897K  blue-rocket-elect
2sb647 2sb647a.pdf

B647
B647

2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A)Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

 0.13. Size:568K  feihonltd
b647a.pdf

B647
B647

MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform

 0.14. Size:244K  lzg
2sb647a-b.pdf

B647
B647

2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80

 0.15. Size:244K  lzg
2sb647a-c.pdf

B647
B647

2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80

 0.16. Size:152K  haolin elec
2sb647.pdf

B647
B647

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDSOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation 1. BASE PCM: 0.9 W (Tamb=25) 2. COLLECTOR 1 Collector current 2 ICM: -1 A 3. EMITTER 3 Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELE

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2N3055 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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