3DD13001_A1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD13001_A1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 0.25 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO92
Búsqueda de reemplazo de 3DD13001_A1
3DD13001_A1 Datasheet (PDF)
3dd13001 a1.pdf

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
3dd13001.pdf

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333
3dd13001b.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 1300113001=Device code S 6B S 6B=Code 1ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/BagB-TA
3dd13001.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SB1215R | 3DD4203D



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