3DD13001_A1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD13001_A1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO92
3DD13001_A1 Transistor Equivalent Substitute - Cross-Reference Search
3DD13001_A1 Datasheet (PDF)
3dd13001 a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
3dd13001.pdf
3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333
3dd13001b.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 1300113001=Device code S 6B S 6B=Code 1ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/BagB-TA
3dd13001.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta
3dd13001.pdf
3DD13001(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 4.455.21 2. COLLECTOR 3. EMITTER 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector -Base Voltage 600 V 1.402.03VCEO Collector-Emitter Voltage 400 V 2.67VEB
3dd13001a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
3dd13001p.pdf
NPN R 3DD13001 P 3DD13001 P NPN VCEO 400 V IC 0.17 A Ptot Ta=25 0.6 W
3dd13001p1.pdf
NPN R 3DD13001 P1 3DD13001 P1 NPN VCEO 400 V IC 0.2 A Ptot Ta=25 0.6 W
3dd13001.pdf
SMD Type TransistorsNPN Transistors3DD13001 Features1.70 0.1 Collector-emitter Voltage: V(BR)CEO=400V Collector Current: IC=0.2A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 7 VCollector Current -
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: DTA144ESA | 2SC5262 | DTA144TN3
History: DTA144ESA | 2SC5262 | DTA144TN3
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