2SB1580 Todos los transistores

2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (-100V , -2A) 2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. (2) (3) (1) Base(Gate) (2) Collector(Dr

SMD Type Transistors PNP Transistors 2SB1580 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V Complements the 2SD2195 C 0.42 0.1 0.46 0.1 1.Base B 2.Collector 3.Emitter R1 R2 E R1 3.5k R2 300 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

Transistors 2SB1589 Silicon PNP epitaxial planar type Unit mm For low-frequency output amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features Low collector-emitter saturation voltage VCE(sat) Large collector power dissipation PC 1 23 Mini Power type package, allowing downsizing of the equipment 0.4 0.08 0.5 0.08 0.4 0.04 and automatic insertion through the tape packi

Transistor 2SB1589 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4

E (70 ) B Darlington 2SB1587 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Ratings Unit Unit Symbol Conditions 0.2 0.2 5.5 15.6 VCBO 160 V ICBO VCB

E (70 ) B Darlington 2SB1588 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 VCBO 160 V ICBO VCB=

SMD Type Transistors PNP Transistors 2SB1589 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. For low-frequency output amplification 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emit

isc Silicon PNP Darlington Power Transistor 2SB1587 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = -6A, V =- 4V) FE C CE Low Collector Saturation Voltage- V = -2.5V(Max)@ (I = -6A, I = -6mA) CE(sat) C B Complement to Type 2SD2438 Minimum Lot-to-Lot variations for robust device performance and relia

isc Silicon PNP Darlington Power Transistor 2SB1588 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2439 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applicati