2SB1580 Datasheet and Replacement

2SB1580 / 2SB1316 / 2SB1567TransistorsPower Transistor (-100V , -2A)2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SB15804.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)4) Complements the 2SD2195 / 2SD1980 / 2SD2398.(2)(3)(1) Base(Gate)(2) Collector(Dr

SMD Type TransistorsPNP Transistors2SB1580SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V Complements the 2SD2195C0.42 0.10.46 0.11.BaseB2.Collector3.EmitterR1 R2ER1 3.5kR2 300 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

Transistors2SB1589Silicon PNP epitaxial planar typeUnit: mmFor low-frequency output amplification4.50.11.60.2 1.50.1 Features Low collector-emitter saturation voltage VCE(sat) Large collector power dissipation PC1 23 Mini Power type package, allowing downsizing of the equipment0.40.08 0.50.08 0.40.04and automatic insertion through the tape packi

Transistor2SB1589Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4

E(70)BDarlington 2SB1587Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Ratings UnitUnit Symbol Conditions0.20.2 5.515.6VCBO 160V ICBO VCB

E(70)BDarlington 2SB1588Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions RatingsUnit0.20.2 5.515.6VCBO 160 V ICBO VCB=

SMD Type TransistorsPNP Transistors2SB15891.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. For low-frequency output amplification0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emit

isc Silicon PNP Darlington Power Transistor 2SB1587DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = -6A, V =- 4V)FE C CELow Collector Saturation Voltage-: V = -2.5V(Max)@ (I = -6A, I = -6mA)CE(sat) C BComplement to Type 2SD2438Minimum Lot-to-Lot variations for robust deviceperformance and relia

isc Silicon PNP Darlington Power Transistor 2SB1588DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2439Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplicati