SD1538-8 Todos los transistores

 

SD1538-8 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SD1538-8
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 583 W
   Tensión colector-base (Vcb): 65 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 11 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: 400-2L-FLG
 

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SD1538-8 Datasheet (PDF)

 ..1. Size:13K  advanced-semi
 sd1538-8.pdf pdf_icon

SD1538-8

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION: A4x .062 x 45 .040 x 45The ASI SD1538-8 is a Common 2xBCBase Device Designed for DME IFF, F Eand TACAN Pulse Applications. D G2xRFEATURES INCLUDE: H I J K Gold Metelization L InputMatching P N Broad Band Performance M MINIMUM MAXIMUMDIM

 7.1. Size:71K  st
 sd1538-08.pdf pdf_icon

SD1538-8

SD1538-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEIFF, DME, AND TACAN APPLICATIONS.200 W (typ.) IFF 1030 - 1090 MHz.150 W(min.) DME 1025 - 1150 MHz.140 W (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 x .400 2LFL (M138).BALLASTING AND LOW THERMALhermetically sealedRESISTANCE FOR RELIABILITY ANDORDER

 8.1. Size:71K  st
 sd1538.pdf pdf_icon

SD1538-8

SD1538-02RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.200 WATTS (typ.) IFF 1030 - 1090 MHz.150 WATTS (min.) DME 1025 - 1150 MHz.140 WATTS (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 SQ. 2LFL (M103).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRA

 8.2. Size:57K  panasonic
 2sd1538.pdf pdf_icon

SD1538-8

Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC270A | PTB20135 | 2N2104A | BD139-25 | GT122A

 

 
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