SD1538-8 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SD1538-8
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 583 W
   Tensión colector-base (Vcb): 65 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 11 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: 400-2L-FLG

Búsqueda de reemplazo de transistor bipolar SD1538-8

SD1538-8 Datasheet (PDF)

..1. Size:13K advanced-semi
sd1538-8.pdf

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION: A4x .062 x 45 .040 x 45The ASI SD1538-8 is a Common 2xBCBase Device Designed for DME IFF, F Eand TACAN Pulse Applications. D G2xRFEATURES INCLUDE: H I J K Gold Metelization L InputMatching P N Broad Band Performance M MINIMUM MAXIMUMDIM

7.1. Size:71K st
sd1538-08.pdf

SD1538-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEIFF, DME, AND TACAN APPLICATIONS.200 W (typ.) IFF 1030 - 1090 MHz.150 W(min.) DME 1025 - 1150 MHz.140 W (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 x .400 2LFL (M138).BALLASTING AND LOW THERMALhermetically sealedRESISTANCE FOR RELIABILITY ANDORDER

8.1. Size:71K st
sd1538.pdf

SD1538-02RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.200 WATTS (typ.) IFF 1030 - 1090 MHz.150 WATTS (min.) DME 1025 - 1150 MHz.140 WATTS (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 SQ. 2LFL (M103).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRA

8.2. Size:57K panasonic
2sd1538.pdf

Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ

8.3. Size:1412K texas
csd15380f3.pdf

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD15380F3ZHCSEZ4A MAY 2016REVISED JULY 2017CSD15380F3 20V N FemtoFETMOSFET1 1 CiSS COSSTA = 25C Qg QgdVDS 20 V Qg

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: LBC858CDW1T1G | MPQ4354 | HE9014

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050