SD1538-8 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SD1538-8

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 583 W

Tensión colector-base (Vcb): 65 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 3.5 V

Corriente del colector DC máxima (Ic): 11 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: 400-2L-FLG

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SD1538-8 datasheet

 ..1. Size:13K  advanced-semi
 sd1538-8.pdf pdf_icon

SD1538-8

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION A 4x .062 x 45 .040 x 45 The ASI SD1538-8 is a Common 2xB C Base Device Designed for DME IFF, F E and TACAN Pulse Applications. D G 2xR FEATURES INCLUDE H I J K Gold Metelization L InputMatching P N Broad Band Performance M MINIMUM MAXIMUM DIM

 7.1. Size:71K  st
 sd1538-08.pdf pdf_icon

SD1538-8

SD1538-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS .200 W (typ.) IFF 1030 - 1090 MHz .150 W(min.) DME 1025 - 1150 MHz .140 W (typ.) TACAN 960 - 1215 MHz .7.8 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 x .400 2LFL (M138) .BALLASTING AND LOW THERMAL hermetically sealed RESISTANCE FOR RELIABILITY AND ORDER

 8.1. Size:71K  st
 sd1538.pdf pdf_icon

SD1538-8

SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .200 WATTS (typ.) IFF 1030 - 1090 MHz .150 WATTS (min.) DME 1025 - 1150 MHz .140 WATTS (typ.) TACAN 960 - 1215 MHz .7.8 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 SQ. 2LFL (M103) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRA

 8.2. Size:57K  panasonic
 2sd1538.pdf pdf_icon

SD1538-8

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circ

MOSTRAR MÁS

Otros transistores... NSS1C200LT1G, SBT5853PT1G, SBT5853PT2G, ZX5T150, ZX5T250, ZXTP2013, SD1441, SD1477, MJE350, TP9380, TPV375, 2N2221AUA, 2N2221AUB, 2N22221AL, 2N2222AL, 2N2222AUA, 2N3418S