SD1538-8 Datasheet and Replacement

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION: A4x .062 x 45 .040 x 45The ASI SD1538-8 is a Common 2xBCBase Device Designed for DME IFF, F Eand TACAN Pulse Applications. D G2xRFEATURES INCLUDE: H I J K Gold Metelization L InputMatching P N Broad Band Performance M MINIMUM MAXIMUMDIM

SD1538-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEIFF, DME, AND TACAN APPLICATIONS.200 W (typ.) IFF 1030 - 1090 MHz.150 W(min.) DME 1025 - 1150 MHz.140 W (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 x .400 2LFL (M138).BALLASTING AND LOW THERMALhermetically sealedRESISTANCE FOR RELIABILITY ANDORDER

SD1538-02RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.200 WATTS (typ.) IFF 1030 - 1090 MHz.150 WATTS (min.) DME 1025 - 1150 MHz.140 WATTS (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 SQ. 2LFL (M103).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRA

Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD15380F3ZHCSEZ4A MAY 2016REVISED JULY 2017CSD15380F3 20V N FemtoFETMOSFET1 1 CiSS COSSTA = 25C Qg QgdVDS 20 V Qg