All Transistors. SD1538-8 Datasheet

 

SD1538-8 Datasheet, Equivalent, Cross Reference Search


   Type Designator: SD1538-8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 583 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 11 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: 400-2L-FLG

 SD1538-8 Transistor Equivalent Substitute - Cross-Reference Search

   

SD1538-8 Datasheet (PDF)

 ..1. Size:13K  advanced-semi
sd1538-8.pdf

SD1538-8

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION: A4x .062 x 45 .040 x 45The ASI SD1538-8 is a Common 2xBCBase Device Designed for DME IFF, F Eand TACAN Pulse Applications. D G2xRFEATURES INCLUDE: H I J K Gold Metelization L InputMatching P N Broad Band Performance M MINIMUM MAXIMUMDIM

 7.1. Size:71K  st
sd1538-08.pdf

SD1538-8
SD1538-8

SD1538-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEIFF, DME, AND TACAN APPLICATIONS.200 W (typ.) IFF 1030 - 1090 MHz.150 W(min.) DME 1025 - 1150 MHz.140 W (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 x .400 2LFL (M138).BALLASTING AND LOW THERMALhermetically sealedRESISTANCE FOR RELIABILITY ANDORDER

 8.1. Size:71K  st
sd1538.pdf

SD1538-8
SD1538-8

SD1538-02RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.200 WATTS (typ.) IFF 1030 - 1090 MHz.150 WATTS (min.) DME 1025 - 1150 MHz.140 WATTS (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 SQ. 2LFL (M103).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRA

 8.2. Size:57K  panasonic
2sd1538.pdf

SD1538-8
SD1538-8

Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ

 8.3. Size:1412K  texas
csd15380f3.pdf

SD1538-8
SD1538-8

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD15380F3ZHCSEZ4A MAY 2016REVISED JULY 2017CSD15380F3 20V N FemtoFETMOSFET1 1 CiSS COSSTA = 25C Qg QgdVDS 20 V Qg

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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