3DA10A Todos los transistores

 

3DA10A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DA10A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

 Búsqueda de reemplazo de 3DA10A

- Selecciónⓘ de transistores por parámetros

 

3DA10A datasheet

 ..1. Size:31K  shaanxi
 3da76 3da10a 3da96.pdf pdf_icon

3DA10A

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9

 ..2. Size:23K  shaanxi
 3da10a.pdf pdf_icon

3DA10A

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10A NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611 4. Use for analog computer power output, amplifica

 9.1. Size:134K  china
 3da100.pdf pdf_icon

3DA10A

3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V

 9.2. Size:29K  shaanxi
 3da101 3da102.pdf pdf_icon

3DA10A

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog

MOSTRAR MÁS

Otros transistores... 3DA3417 , 3DA3420 , 3DA3421 , 3DA3422 , 3DA3502 , 3DA1 , 3DA2 , 3DA4 , B772 , 3DA10B , 3DA10C , 3DA10D , 3DA10E , 3DA10F , 3DA10G , 3DA100A , 3DA100B .

 

 

 

 

↑ Back to Top
.