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3DA10A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DA10A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3
 

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3DA10A Datasheet (PDF)

 ..1. Size:31K  shaanxi
 3da76 3da10a 3da96.pdf pdf_icon

3DA10A

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9

 ..2. Size:23K  shaanxi
 3da10a.pdf pdf_icon

3DA10A

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10ANPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611 4. Use for analog computer power output, amplifica

 9.1. Size:134K  china
 3da100.pdf pdf_icon

3DA10A

3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V

 9.2. Size:29K  shaanxi
 3da101 3da102.pdf pdf_icon

3DA10A

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog

MOSTRAR MÁS

Otros transistores... 3DA3417 , 3DA3420 , 3DA3421 , 3DA3422 , 3DA3502 , 3DA1 , 3DA2 , 3DA4 , S8550 , 3DA10B , 3DA10C , 3DA10D , 3DA10E , 3DA10F , 3DA10G , 3DA100A , 3DA100B .

History: MMBC1654N6 | MJ200AA55 | BC807DS | 2N528 | NTE126A | RN1115FT | KTC3206

 

 
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