3DA10A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DA10A Specs and Replacement

Type Designator: 3DA10A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

3DA10A Substitution

- BJT ⓘ Cross-Reference Search

3DA10A datasheet

..1. Size:31K shaanxi

3da76 3da10a 3da96.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9... See More ⇒

..2. Size:23K shaanxi

3da10a.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10A NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611 4. Use for analog computer power output, amplifica... See More ⇒

9.1. Size:134K china

3da100.pdf pdf_icon

3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V... See More ⇒

9.2. Size:29K shaanxi

3da101 3da102.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog... See More ⇒