2N658
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N658
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 16
V
Tensión emisor-base (Veb): 12
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 120
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2.5
MHz
Capacitancia de salida (Cc): 24
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N658
2N658
Datasheet (PDF)
0.1. Size:11K semelab
2n6583.pdf 
2N6583Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.2. Size:11K semelab
2n6581.pdf
2N6581Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.3. Size:187K inchange semiconductor
2n6583.pdf
isc Silicon NPN Power Transistor 2N6583DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
0.4. Size:187K inchange semiconductor
2n6584.pdf
isc Silicon NPN Power Transistor 2N6584DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
0.5. Size:187K inchange semiconductor
2n6582.pdf
isc Silicon NPN Power Transistor 2N6582DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
