All Transistors. 2N658 Datasheet

 

2N658 Datasheet and Replacement


   Type Designator: 2N658
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 120 °C
   Transition Frequency (ft): 2.5 MHz
   Collector Capacitance (Cc): 24 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO5
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2N658 Datasheet (PDF)

 0.1. Size:11K  semelab
 2n6583.pdf pdf_icon

2N658

2N6583Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.2. Size:11K  semelab
 2n6581.pdf pdf_icon

2N658

2N6581Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.3. Size:187K  inchange semiconductor
 2n6583.pdf pdf_icon

2N658

isc Silicon NPN Power Transistor 2N6583DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s

 0.4. Size:187K  inchange semiconductor
 2n6584.pdf pdf_icon

2N658

isc Silicon NPN Power Transistor 2N6584DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s

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Datasheet: 2N6574 , 2N6575 , 2N6576 , 2N6577 , 2N6578 , 2N6579 , 2N657A , 2N657S , 2SD669 , 2N6580 , 2N6581 , 2N6582 , 2N6583 , 2N6584 , 2N6585 , 2N6586 , 2N6587 .

History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | 2SC3709A | SGSF321

Keywords - 2N658 transistor datasheet

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